DF005S thru DF10S
Vishay General Semiconductor
Miniature Glass Passivated Single-Phase
Surface Mount Bridge Rectifiers
FEATURES
• UL recognition, file number E54214
• Ideal for automated placement
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~
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• High surge current capability
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 250 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Case Style DFS
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PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
J
max.
1A
50 V to 1000 V
50 A
5 µA
1.1 V
150 °C
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for SMPS, lighting ballaster, adapter,
battery charger, home appliances, office equipment,
and telecommunication applications.
MECHANICAL DATA
Case:
DFS
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity:
As marked on body
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward output rectified
current at T
A
= 40 °C
(1)
Peak forward surge current single half
sine-wave superimposed on rated load
Rating for fusing (t < 8.3 ms)
Operating junction and storage
temperature range
Note:
(1) Units mounted on P.C.B. with 0.51 x 0.51" (13 x 13 mm) copper pads
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
T
J
, T
STG
SYMBOL
DF005S
DF005S
50
35
50
DF01S
DF01S
100
70
100
DF02S
DF02S
200
140
200
DF04S
DF04S
400
280
400
1.0
50
10
- 55 to + 150
DF06S
DF06S
600
420
600
DF08S
DF08S
800
560
800
DF10S
DF10S
1000
700
1000
V
V
V
A
A
A
2
s
°C
UNIT
Document Number: 88573
Revision: 30-Jan-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
DF005S thru DF10S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous
forward voltage drop per diode
Maximum DC reverse
current at rated DC blocking
voltage per diode
Typical junction
capacitance per diode
(1)
Note:
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 V
TEST CONDITIONS SYMBOL DF005S DF01S
1.0 A
T
A
= 25 °C
T
A
= 125 °C
V
F
DF02S
DF04S
1.1
5.0
500
25
DF06S
DF08S
DF10S
UNIT
V
I
R
µA
C
J
pF
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
(1)
Note:
(1) Units mounted on P.C.B. with 0.51 x 0.51" (13 x 13 mm) copper pads
SYMBOL DF005S DF01S
R
θJA
R
θJL
DF02S
DF04S
40
15
DF06S
DF08S
DF10S
UNIT
°C/W
ORDERING INFORMATION
(Example)
PREFERRED P/N
DF06S-E3/45
DF06S-E3/77
UNIT WEIGHT (g)
0.399
0.399
PREFERRED PACKAGE CODE
45
77
BASE QUANTITY
50
1500
DELIVERY MODE
Tube
13" diameter paper tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
1.0
60
Average Forward Output Current (A)
Peak Forward Surge Current (A)
60 Hz
Resistive or
Inductive Load
T
J
= 150 °C
Single Sine-Wave
50
40
0.5
30
20
P.C.B. Mounted on
0.51 x 0.51" (13 x 13 mm)
Copper Pads
0
20
40
60
80
100
120
140
160
10
1.0 Cycle
0
1
10
100
Ambient Temperature (°C)
Number
of Cycles at 60 Hz
Figure 1. Derating Curve Output Rectified Current
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
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For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88573
Revision: 30-Jan-08
DF005S thru DF10S
Vishay General Semiconductor
10
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Instantaneous Forward Current (A)
1
Junction Capacitance (pF)
10
0.1
T
J
= 25 °C
Pulse
Width
= 300
µs
1 % Duty Cycle
0.01
0.4
1
0.6
0.8
1.0
1.2
1.4
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Forward Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
100
100
10
T
J
= 125 °C
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (µA)
10
1
1
0.1
T
J
= 50 °C
0.01
0
20
40
60
80
100
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse
Voltage
(%)
t - Heating Time (s)
Figure 4. Typical Reverse Leakage Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
Case Style DFS
0.205 (5.2)
0.195 (5.0)
Mounting Pad La yout
0.047 (1.20)
0.040 (1.02)
0.047 MIN.
(1.20 MIN.)
0.060 MIN.
(1.52 MIN.)
0.404 (10.3)
0.386 (9.80)
0.335 (8.51)
0.320 (8.13)
45°
0.404 MAX.
(10.26 MAX.)
0.255 (6.5)
0.245 (6.2)
0.130 (3.3)
0.120 (3.05)
0.205 (5.2)
0.195 (5.0)
0.013 (0.330)
0.009 (0.241)
0.060 (1.524)
0.040 (1.016)
0.013 (0.330)
0.003 (0.076)
Document Number: 88573
Revision: 30-Jan-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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