DF005S - DF10S
Discrete POWER & Signal
Technologies
DF005S - DF10S
0.255 (6.477)
0.245 (6.223)
0.042 (1.067)
0.038 (0.965)
•
•
•
Surge overload rating: 50 amperes
peak.
Glass passivated junction.
+
Features
0.205 (5.207)
0.195 (4.953)
0.335 (8.509)
0.320 (8.128)
SDIP
Low leakage.
LOW PROFILE ALSO AVAILABLE
BODY - - 0.102 (2.591)*
0.095 (2.413)*
Dimensions are in:
inches (mm)
0.009 (0.229)
Typical
0.310 (7.874)
0.290 (7.366)
0.135 (3.429)*
0.115 (2.921)*
0.060 (1.524)
0.040 (1.016)
0.008 (0.203)
0.004 (0.102)
1.5 Ampere Bridge Rectifiers
Absolute Maximum Ratings*
Symbol
I
O
i
f(surge)
P
D
R
θJA
T
stg
T
J
T
A
= 25°C unless otherwise noted
0.410 (10.414)
0.360 ( 9.144)
Parameter
Average Rectified Current
@ T
A
= 40°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient,** per leg
Storage Temperature Range
Operating Junction Temperature
Value
1.5
Units
A
50
3.1
25
40
-55 to +150
-55 to +150
A
W
mW/°C
°C/W
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**
Device mounted on PCB with 0.5 x 0.5" (13 x 13 mm).
Electrical Characteristics
Parameter
T
A
= 25°C unless otherwise noted
Device
005S
01S
100
70
100
02S
200
140
200
04S
400
280
400
5.0
500
1.1
10
25
06S
600
420
600
08S
800
560
800
10S
1000
700
1000
50
35
50
Units
V
V
V
µA
µA
V
2
A Sec
pF
Peak Repetitive Reverse Voltage
Maximum RMS Bridge Input Voltage
DC Reverse Voltage
(Rated V
R
)
Maximum Reverse Leakage,
total bridge @ rated V
R
T
A
= 25°C
T
A
= 125°C
Maximum Forward Voltage Drop,
per bridge
@ 1.0 A
2
I t rating for fusing
t < 8.35 ms
Typical Junction Capacitance, per leg
V
R
= 4.0 V, f = 1.0 MHz
©1998
Fairchild Semiconductor Corporation
DF005S-DF10S, Rev. A
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Definition of Terms
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Advance Information
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Formative or
In Design
Definition
This datasheet contains the design specifications for
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