D3SBA60 datasheet, PDF - EEWORLD Datasheet

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D3SBA60: Descriptionsilicon bridge rectifier; CategoryDiscrete semiconductor diode; File Size161KB，6 Pages; ManufacturerEIC [EIC discrete Semiconductors]; Environmental Compliance

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D3SBA60 Overview

silicon bridge rectifier

D3SBA60 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	EIC [EIC discrete Semiconductors]
package instruction	R-PSFM-T4
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	HIGH RELIABILITY
Minimum breakdown voltage	600 V
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
JESD-30 code	R-PSFM-T4
Maximum non-repetitive peak forward current	80 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Maximum output current	2.3 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Guideline	TS 16949
Maximum repetitive peak reverse voltage	600 V
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Base Number Matches	1

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SHINDENGEN

General Purpose Rectifiers

SIL Bridges

D3SBA20

200V 4A

FEATURES

●

Thin Single In-Line Package

●

High IFSM

●

Applicable to Automatic Insertion

OUTLINE DIMENSIONS

Case : 3S

Unit : mm

APPLICATION

●

Switching power supply

●

Home Appliances, Office Equipment

●

Telecommunication, Factory Automation

RATINGS

●Absolute Maximum Ratings (If not specified Tc=25℃)

Item

Symbol

Conditions

Storage Temperature

Tstg

Operating Junction Temperature

Maximum Reverse Voltage

Average Rectified Forward Current

50Hz sine wave, R-load With heatsink

Peak Surge Forward Current

Current Squared Time

Dielectric Strength

Mounting Torque

FSM

Vdis

TOR

Tc=108℃

50Hz sine wave, R-load Without heatsink Ta=25℃

50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25℃

1ms≦t＜10ms Tj=25℃

Terminals to case, AC 1 minute

（

Recommended torque：

0.5N½m）

Ratings

-40∼150

150

200

2.3

0.8

Ratings

Max.1.05

Max.10

Max.5.5

Max.6

Max.30

Unit

℃

N½m

●Electrical Characteristics (If not specified Tc=25℃)

Item

Symbol

Conditions

Forward Voltage

=2A,

Pulse measurement, Rating of per diode

, Pulse measurement, Rating of per diode

Reverse Current

θjc

junction to case With heatsink

Thermal Resistance

θjl

junction to lead Without heatsink

θja

junction to ambient Without heatsink

Unit

μA

℃/W

D3SBA60 Related Products

	D3SBA60	D3SBA20
Description	silicon bridge rectifier	silicon bridge rectifier
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Maker	EIC [EIC discrete Semiconductors]	EIC [EIC discrete Semiconductors]
package instruction	R-PSFM-T4	R-PSFM-T4
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Other features	HIGH RELIABILITY	HIGH RELIABILITY
Minimum breakdown voltage	600 V	200 V
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
JESD-30 code	R-PSFM-T4	R-PSFM-T4
Maximum non-repetitive peak forward current	80 A	80 A
Number of components	4	4
Phase	1	1
Number of terminals	4	4
Maximum operating temperature	150 °C	150 °C
Maximum output current	2.3 A	2.3 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Guideline	TS 16949	TS 16949
Maximum repetitive peak reverse voltage	600 V	200 V
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Base Number Matches	1	1

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