V30100P
New Product
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.57 V at I
F
= 8 A
FEATURES
• Trench MOS Schottky Technology
• Low forward voltage drop, low power losses
3
2
1
• High efficiency operation
• Low thermal resistance
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, free-wheeling diodes, Oring diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case:
TO-247AD (TO-3P)
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity:
As marked
Mounting Torque:
10 in-lbs Maximum
TO-247AD (TO-3P)
PIN 1
PIN 3
PIN 2
CASE
MAJOR RATINGS AND CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 15 A
T
j
max.
2 x 15 A
100 V
120 A
0.65 V
150 °C
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified (see Fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Operating junction and storage temperature range
per device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
STG
V30100P
100
30
15
120
- 40 to + 150
UNIT
V
A
A
°C
Document Number 88973
27-Apr-07
www.vishay.com
1
V30100P
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Breakdown voltage
Instantaneous forward voltage
(1)
per
diode
TEST CONDITIONS
at I
R
= 1.0 mA
at I
F
= 8 A
I
F
= 15 A
at I
F
= 8 A
I
F
= 15 A
at V
R
= 70 V
Reverse current
(1)
per diode
at V
R
= 100 V
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
T
j
= 25 °C
T
j
= 25 °C
V
F
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
SYMBOL
V
(BR)
TYP.
100 (minimum)
0.64
0.78
0.57
0.65
3.30
3.25
I
R
13.7
7.2
MAX.
-
-
0.85
V
-
0.71
-
-
300
20
µA
mA
µA
mA
UNIT
V
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance per diode
SYMBOL
R
θJC
V30100P
2.0
UNIT
°C/W
ORDERING INFORMATION
PREFERRED P/N
V30100P-E3/45
UNIT WEIGHT (g)
6.12
PREFERRED PACKAGE CODE
45
BASE QUANTITY
30/Tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
35
Resistive or Inductive Load
14
D = 0.8
12
D = 0.5
D = 0.3
10
8
6
D = 0.1
D = 0.2
D = 1.0
Average Forward Current (A)
30
25
20
15
10
5
0
0
25
50
75
100
125
150
Average Power Loss (W)
T
4
2
0
0
2
4
6
8
10
12
14
16
18
Mounted on specific heatsink
D = tp/T
tp
Case Temperature (°C)
Average Forward Current (A)
Figure 1. Forward Current Derating Curve
Figure 2. Forward Power Loss Characteristics Per Diode
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Document Number 88973
27-Apr-07
V30100P
Vishay General Semiconductor
100
10000
T
j
= 150 °C
T
j
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
1000
Instantaneous Forward Current (A)
10
T
j
= 125 °C
T
j
= 25 °C
1
100
0.1
0
0.5
1
1.5
2
10
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
100
10
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
Junction to Case
T
j
= 150 °C
10
T
j
= 125 °C
1
1
0.1
0.01
T
j
= 25 °C
0.001
10
20
30
40
50
60
70
80
90
100
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse
Voltage
(%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-247AD (TO-3P)
0.245 (6.2)
0.225 (5.7)
0.645 (16.4)
0.625 (15.9)
0.323 (8.2)
0.313 (7.9)
0.203 (5.16)
0.193 (4.90)
0.078 REF
(1.98)
10
30
0.170
(4.3)
0.840 (21.3)
0.820 (20.8)
0.142 (3.6)
0.138 (3.5)
10 TYP.
BOTH SIDES
1
2
3
0.086 (2.18)
0.076 (1.93)
0.127 (3.22)
0.118 (3.0)
0.108 (2.7)
1 REF.
BOTH
SIDES
0.160 (4.1)
0.140 (3.5)
0.795 (20.2)
0.775 (19.6)
0.117 (2.97)
0.225 (5.7)
0.205 (5.2)
0.048 (1.22)
0.044 (1.12)
PIN 1
PIN 3
0.030 (0.76)
0.020 (0.51)
PIN 2
CASE
Document Number 88973
27-Apr-07
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3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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