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DSA1241DI1-C0014BVAO

Description
CMOS Output Clock Oscillator, 156.25MHz Nom
CategoryPassive components    oscillator   
File Size849KB,30 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Environmental Compliance
Download Datasheet Parametric View All

DSA1241DI1-C0014BVAO Overview

CMOS Output Clock Oscillator, 156.25MHz Nom

DSA1241DI1-C0014BVAO Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Objectid145213355520
package instructionVDFN, 6 PIN
Reach Compliance Codecompliant
YTEOL6.38
Other featuresSELECTABLE O/P FREQ
Frequency Adjustment - MechanicalNO
frequency stability50%
Installation featuresSURFACE MOUNT
Number of terminals6
Nominal operating frequency156.25 MHz
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Oscillator typeCMOS
Output load15 pF
Encapsulate equivalent codeSOLCC6,.08,32
physical size2.5mm x 2.0mm x 0.9mm
Filter levelAEC-Q100
Maximum supply voltage3.63 V
Minimum supply voltage2.25 V
surface mountYES
maximum symmetry55/45 %

DSA1241DI1-C0014BVAO Preview

DSA12X1
High Performance CMOS MEMS Oscillator for Automotive
Features
Automotive AEC-Q100 Qualified
Wide Frequency Range: 2.5 MHz to 170 MHz
Very Low RMS Phase Jitter: <650 fs (typ.)
High Stability: ±20 ppm, ±25 ppm, ±50 ppm
Wide Temperature Range:
- Automotive Grade 1: –40°C to +125°C
- Automotive Grade 2: –40°C to +105°C
- Automotive Grade 3: –40°C to +85°C
Small Industry-Standard Footprints
- 2.5 mm x 2.0 mm
- 3.2 mm x 2.5 mm
- 5.0 mm x 3.2 mm
- 7.0 mm x 5.0 mm
Excellent Shock and Vibration Immunity
- Qualified to MIL-STD-883
High Reliability
- 20x Better MTF than Quartz Oscillators
Supply Range of 2.25V to 3.63V
Standby, Frequency Select, and Output Enable
Functions
Lead-Free and RoHS-Compliant
General Description
The DSA12x1 family of high performance oscillators
utilizes the latest generation of silicon MEMS
technology that reduces close-in noise and provides
excellent jitter and stability over a wide range of supply
voltages and temperatures. By eliminating the need for
quartz or SAW technology, MEMS oscillators
significantly enhance reliability and accelerate product
development,
while
meeting
stringent
clock
performance criteria for automotive applications.
The DSA12x1 family features a control function on pin
1 or pin 2 that permits either a standby feature
(complete power down when STDBY is low), output
enable (output is tri-stated with OE low), or a frequency
select (choice of two frequencies selected by FS
high/low). See the
Product Identification System
section for detailed information.
All oscillators are available in industry-standard
packages, including the small 2.5 mm x 2.0 mm, and
are “drop-in” replacements for standard 4-pin and 6-pin
CMOS quartz crystal oscillators.
Package Types
DSA1201/1211/1221
6-Lead CDFN/VDFN
OE/STDBY/FS
NC
GND
1
6
Applications
• Automotive Infotainment
• Automotive ADAS
• In-Vehicle Networking, CAN Bus, Ethernet
VDD
NC
CLK
2
5
3
4
DSA1231/1241/1251
6-Lead CDFN/VDFN
NC
OE/STDBY/FS
GND
1
6
VDD
NC
CLK
2
5
3
4
2020 Microchip Technology Inc.
DS20006385A-page 1
DSA12X1
Functional Block Diagrams
DSA1201/1211/1221
Pin 1
OE/STDBY/FS
DIGITAL
CONTROL
SUPPLY
REGULATION
Pin 6
VDD
Pin 2
NC
MEMS
RESONATOR
TEMP SENSOR +
CONTROL &
COMPENSATION
Pin 5
NC
PLL
OUTPUT
DIV
Pin 3
GND
Pin 4
CLK
DSA1231/1241/1251
Pin 1
NC
DIGITAL
CONTROL
SUPPLY
REGULATION
Pin 6
VDD
Pin 2
OE/STDBY/FS
MEMS
RESONATOR
TEMP SENSOR +
CONTROL &
COMPENSATION
Pin 5
NC
PLL
OUTPUT
DIV
Pin 3
GND
Pin 4
CLK
DS20006385A-page 2
2020 Microchip Technology Inc.
DSA12X1
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage .......................................................................................................................................... –0.3V to +4.0V
Input Voltage .................................................................................................................................... –0.3V to V
DD
+ 0.3V
ESD Protection (HBM) ...............................................................................................................................................4 kV
ESD Protection (MM) ................................................................................................................................................400V
ESD Protection (CDM) ............................................................................................................................................1.5 kV
† Notice:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended
periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
Electrical Characteristics:
V
DD
= 2.5V ±10% or 3.3V ±10%; T
A
= –40°C to +125°C, unless noted.
Parameter
Supply Voltage
Supply Current
Symbol
V
DD
I
DD
Standby Current
I
STDBY
Δf
Frequency Stability
Aging
Startup Time
Δf
t
SU
V
IH
Input Logic Levels
V
IL
Output Disable Time
Output Enable Time
Enable Pull-Up Resistor
Frequency
Output Logic Level High
Output Logic Level Low
t
DA
t
EN
f
0
V
OH
V
OL
0.75 x
V
DD
2.5
0.8 x
V
DD
Output Transition Time, Rise
20% to 80%;C
L
=15 pF
t
R
23
2.5
5.5
1.5
1.3
1.2
1.6
2.4
Min.
2.25
Typ.
27
Max.
3.63
Units
V
mA
Conditions
Note 1
Output enabled, CMOS (no load),
f
OUT
= 100 MHz
Output disabled (tri-state),
f
OUT
= 100 MHz
Input pin = STDBY = Asserted
(V
DD
= 3.3V)
Includes frequency variations due
to initial tolerance, temp., and
power supply voltage
First year @ 25°C
Per year after first year
From 90% V
DD
to valid clock
output, T = +25°C,
Note 2
Input logic high
5
±20
±25
±50
±5
±1
6
0.25 x
V
DD
25
6
350
170
0.2 x
V
DD
μA
ppm
ppm
ms
V
Input logic low
ns
ms
ns
MHz
V
Note 3
STDBY
OE
Pull-up resistor on pin 1,
Note 4
I = ±12 mA (High Drive)
I = ±10 mA (Standard Drive)
I = ±8 mA (Mid Drive)
I = ±6 mA (Low Drive)
Standard Drive Strength
ns
High Drive Strength
Mid Drive Strength
Low Drive Strength
2020 Microchip Technology Inc.
DS20006385A-page 3
DSA12X1
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Characteristics:
V
DD
= 2.5V ±10% or 3.3V ±10%; T
A
= –40°C to +125°C, unless noted.
Parameter
Output Transition Time, Fall
20% to 80%;C
L
=15 pF
Output Duty Cycle
Period Jitter, Peak-to-Peak
Cycle-to-Cycle Jitter, Peak
Integrated Phase Noise
(Random)
Note 1:
2:
3:
4:
Symbol
Min.
t
F
SYM
J
PTP
J
CC
J
PH
45
Typ.
1.3
1.1
1.8
2.4
25
22
0.65
Max.
55
%
ps
ps
ps
RMS
ns
Units
Conditions
Standard Drive Strength
High Drive Strength
Mid Drive Strength
Low Drive Strength
f
OUT
= 100 MHz, High Drive
f
OUT
= 100 MHz, High Drive
12 kHz to 20 MHz @ 100 MHz, T
A
= +105°C
V
DD
pin should be filtered with a 0.1
μF
capacitor.
t
SU
is the time to 100 ppm stable output frequency after V
DD
is applied and outputs are enabled.
t
DA
: See the
Output Waveform
and the
Test Circuit
sections for more information.
Output is enabled if pad is floated (not connected).
DS20006385A-page 4
2020 Microchip Technology Inc.
DSA12X1
TEMPERATURE SPECIFICATIONS
Note 1
Parameters
Temperature Ranges
Maximum Junction Temperature
Storage Temperature Range
Lead Temperature
Note 1:
T
J
T
S
–55
+150
+150
+260
°C
°C
°C
Soldering, 40s
Symbol
Min.
Typ.
Max.
Units
Conditions
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
junction temperature and the thermal resistance from junction to air (i.e., T
A
, T
J
,
JA
). Exceeding the max-
imum allowable power dissipation will cause the device operating junction temperature to exceed the max-
imum +150°C rating. Sustained junction temperatures above +150°C can impact the device reliability.
2020 Microchip Technology Inc.
DS20006385A-page 5
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