DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D260
BLS2731-110
Microwave power transistor
Product specification
Supersedes data of 1998 Jan 30
2001 Dec 05
Philips Semiconductors
Product specification
Microwave power transistor
FEATURES
•
Suitable for short and medium pulse applications
•
Internal input and output matching networks for an easy
circuit design
•
Emitter ballasting resistors improve ruggedness
•
Gold metallization ensures excellent reliability
•
Interdigitated emitter-base structure provides high
emitter efficiency
•
Multicell geometry improves power sharing and reduces
thermal resistance.
dbook, halfpage
BLS2731-110
PINNING - SOT423A
PIN
1
2
3
emitter
base; connected to flange
DESCRIPTION
collector
1
APPLICATIONS
•
Common base class-C pulsed power amplifiers for radar
applications in the 2.7 to 3.1 GHz band.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a 2-lead rectangular flange package with a ceramic cap
(SOT423A) with the common base connected to the
flange.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°C
in a common base class-C test circuit.
MODE OF OPERATION
Pulsed class-C
f
(GHz)
2.7 to 3.1
V
CB
(V)
40
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
P
L
(W)
>110
G
p
(dB)
>7
η
C
(%)
>35
3
2
3
MBK052
Fig.1 Simplified outline.
2001 Dec 05
2
Philips Semiconductors
Product specification
Microwave power transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CES
V
EBO
I
CM
P
tot
T
stg
T
j
T
sld
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
peak collector current
total power dissipation
storage temperature
operating junction temperature
soldering temperature
up to 0.2 mm from ceramic cap;
t
≤
10 s
R
BE
= 0
open collector
t
p
≤
100
µs; δ ≤
10%
CONDITIONS
open emitter
−
−
−
−
−65
−
−
BLS2731-110
MIN.
MAX.
75
75
2
12
500
+200
200
235
UNIT
V
V
V
A
W
°C
°C
°C
t
p
= 100
µs; δ
= 10%; T
mb
= 25
°C −
THERMAL CHARACTERISTICS
SYMBOL
Z
th j-h
Note
1. Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)CBO
V
(BR)CES
I
CBO
I
CES
I
EBO
h
FE
PARAMETER
collector-base breakdown voltage
collector-emitter breakdown voltage
collector leakage current
collector leakage current
emitter leakage current
DC current gain
CONDITIONS
I
C
= 30 mA; open emitter
I
C
= 30 mA; V
BE
= 0
V
CB
= 40 V; I
E
= 0
V
CE
= 40 V; V
BE
= 0
V
EB
= 1.5 V; I
C
= 0
V
CE
= 5 V; I
C
= 3 A
MIN.
75
75
−
−
−
40
MAX.
−
−
3
6
0.6
100
UNIT
V
V
mA
mA
mA
PARAMETER
thermal impedance from junction to
heatsink
CONDITIONS
t
p
= 100
µs; δ
= 10%; note 1
VALUE
0.24
UNIT
K/W
APPLICATION INFORMATION
RF performance at T
h
= 25
°C
in a common base test circuit.
MODE OF OPERATION
f
(GHz)
2.7 to 3.1
Class-C; t
p
= 100
µs; δ
= 10%
2.7 to 2.9
2.9 to 3.1
V
CE
(V)
40
40
40
P
L
(W)
≥110
typ. 130
typ. 120
G
P
(dB)
≥7
typ. 8
typ. 7.5
η
C
(%)
≥35
typ. 42
typ. 40
2001 Dec 05
3
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-110
handbook, halfpage
10
MBK284
Gp
(dB)
8
η
C
Gp
50
η
C
(%)
40
PL
handbook, halfpage
(W)
120
100
2.9 GHz
140
MBK285
2.7
3.1
6
30
80
60
40
4
20
2
10
20
0
2.7
2.8
2.9
3
f (GHz)
0
3.1
0
10
12
14
16
18
PD (W)
20
V
CE
= 40 V; class-C; t
p
= 100
µs; δ
= 10%.
V
CE
= 40 V; class-C; t
p
= 100
µs; δ
= 10%.
Fig.2
Power gain and efficiency as functions of
frequency; typical values.
Fig.3
Load power as a function of drive power;
typical values.
MGM538
handbook, halfpage
12
handbook, halfpage
8
MGM539
Zi
(Ω)
xi
ZL
(Ω)
4
RL
8
0
ri
−4
XL
4
0
2.6
2.8
3
f (GHz)
3.2
−8
2.6
2.8
3
f (GHz)
3.2
V
CB
= 40 V; class-C; P
L
= 110 W.
V
CB
= 40 V; class-C; P
L
= 110 W.
Fig.4
Input impedance as function of frequency
(series components); typical values.
Fig.5
Load impedance as function of frequency
(series components); typical values.
2001 Dec 05
4
Philips Semiconductors
Product specification
Microwave power transistor
BLS2731-110
handbook, full pagewidth
30
30
40
L8
L2
L4
L6
input
L13
L5
L12
L14
L3
L1
L7
L10
L9
C1
output
L11
C2
RC
MGM540
Dimensions in mm.
The components are located on one side of the copper-clad printed-circuit board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
Fig.6 Component layout for 2.7 to 3.1 GHz class-C test circuit.
2001 Dec 05
5
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