BFR949T
NPN Silicon RF Transistor
Preliminary data
For low noise, high-gain broadband amplifiers at
collector currents from 1 mA to 20 mA
f
T
= 9 GHz
F
= 1.0 dB at 1 GHz
3
ESD: Electrostatic discharge
sensitive device, observe handling precaution!
Type
BFR949T
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
T
S
75°C
1)
1
T
is measured on the collector lead at the soldering point to the pcb
S
2For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
Junction - soldering point
2)
2
1
VPS05996
Marking
RKs
1=B
Pin Configuration
2=E
3=C
Package
SC75
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
Value
10
20
20
1.5
35
4
250
150
-65 ... 150
-65 ... 150
Unit
V
mA
mW
°C
R
thJS
300
K/W
Aug-09-2001
BFR949T
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Base-emitter forward voltage
I
E
= 25mA
Collector-base cutoff current
V
CB
= 10 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 1 V,
I
C
= 0
DC current gain
I
C
= 5 mA,
V
CE
= 6 V
h
FE
100
140
200
-
I
EBO
-
-
0.1
µA
I
CBO
-
-
100
nA
V
BEF
-
-
1.05
V
(BR)CEO
10
-
-
V
Symbol
min.
Values
typ.
max.
Unit
2
Aug-09-2001
BFR949T
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
AC characteristics
(verified by random sampling)
Transition frequency
I
C
= 15 mA,
V
CE
= 6 V,
f
= 1 GHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1MHz
Collector-emitter capacitance
V
CE
= 10 V,
f
= 1MHz
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1MHz
Noise figure
I
C
= 5 mA,
V
CE
= 6 V,
Z
S
=
Z
Sopt
,
f
= 1 GHz
I
C
= 3 mA,
V
CE
= 8 V, Z
S
= Z
Sopt
,
f
= 1.8 GHz
Power gain, maximum stable
1)
I
C
= 10 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 900 MHz
Power gain, maximum available
2)
I
C
= 10 mA,
V
CE
= 8 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
Transducer gain
|S
21e
|
2
,
13
,
-
16
11
-
-
I
C
= 15 mA,
V
CE
= 6 V,
Z
S
=
Z
L
= 50
f
= 1 GHz
I
C
= 10 mA,
V
CE
= 8 V, Z
S
= Z
L
= 50
f
= 1.8 GHz
1
G
ms
2
G
ma
Symbol
min.
f
T
C
cb
C
ce
C
eb
F
-
-
7
-
-
-
Values
typ.
9
0.33
0.2
0.6
max.
-
0.4
-
-
Unit
GHz
pF
dB
1
1.5
2.5
-
G
ms
-
20
-
G
ma
-
14
-
= |S
21
/
S
12
|
= |S
21
/
S
12
| (k-(k
2
-1)
1/2
)
3
Aug-09-2001
BFR949T
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
MJS =
.
4.36
30
1.998
41.889
1.569
0.823
291
8.77
1.336
1.048
1.39
0
-
fA
V
-
V
-
fF
ps
mA
V
ns
-
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
NK =
FC =
120
0.152
33.322
0.063
20.766
0.101
0.586
0.00894
0
0.334
0
0.5
0.924
-
A
-
A
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
1.085
1.86
1.095
3.68
72.2
0.849
0.456
0.198
459
0.217
0.75
1.11
300
-
pA
-
pA
µA
-
V
-
V
eV
K
V
-
deg
-
fF
-
-
fF
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
Package Equivalent Circuit:
C
4
C
1
L
2
B
L
3
C
L
1
=
L
2
=
L
3
=
C’
0.762
0.706
0.382
62
84
180
7
40
48
nH
nH
nH
fF
fF
fF
fF
fF
fF
B’
Transistor
Chip
E’
C
1
=
C
2
=
C
3
=
C
4
=
C
5
=
C
6
=
C
6
C
2
L
1
C
3
C
5
E
EHA07524
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor
or sales office to obtain a Infineon Technologies CD-ROM
or see Internet: http://www.infineon.com/silicondiscretes
4
Aug-09-2001
BFR949T
Total power dissipation
P
tot
=
f
(T
S
)
300
mW
P
tot
200
150
100
50
0
0
20
40
60
80
100
120
°C
150
T
S
Permissible Pulse Load
R
thJS
=
f
(t
p
)
Permissible Pulse Load
P
totmax
/P
totDC
=
f
(t
p
)
10
3
10
2
P
totmax
/ P
totDC
R
thJS
10
2
10
1
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10
1 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
10
0 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
t
p
5
Aug-09-2001
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