Data Sheet
μ
PA2660T1R
DUAL N-CHANNEL MOSFET
20 V, 4.0 A, 42 mΩ
Description
The
μ
PA2660T1R is Dual N-channel MOS Field Effect Transistors for switching application.
This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications
such as power switch of portable machine and so on.
R07DS0999EJ0100
Rev.1.00
Jan 16, 2013
Features
•
DS MAXIMUM RATINGS 20V(T
A
= 25°C)
•
2.5V drive available
•
Low on-state resistance
⎯
R
DS (on)1
= 42 mΩ MAX. (V
GS
= 4.5 V, I
D
= 2.0 A)
⎯
R
DS (on)2
= 62 mΩ MAX. (V
GS
= 2.5 V, I
D
= 2.0 A)
•
Built-in gate protection diode
•
Lead-free and Halogen-free
6pinHUSON2020(Dual)
Ordering Information
Part Number
Package
∗
1
6pinHUSON2020(Dual)
Note:
∗1.Pb-free
(This product does not contain Pb in the external electrode and other parts.)
μ
PA2660T1R-E2-AX
Absolute Maximum Ratings (T
A
= 25°C)
Item
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
∗
1
Total Power Dissipation (1 unit, 5 s)
∗
2
Total Power Dissipation (2 units, 5 s)
∗
2
Symbol
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
STG
Ratings
20
±12
±4.0
±16
1.5
2.3
150
–55 to +150
Unit
V
V
A
A
W
W
°C
°C
Channel Temperature
Storage Temperature
Notes:
∗1.
PW≤10
μ
s, Duty Cycle≤1%
∗2.
Mounted on glass epoxy board of 25.4mm x 25.4mm x 0.8mmt
Caution: This product is electrostatic-sensitive device due to low ESD capability and should be handled
with caution for electrostatic discharge.
V
ESD
=
±400V
MIN. ( C = 100pF, R = 1.5KΩ
)
R07DS0999EJ0100 Rev.1.00
Jan 16, 2013
Page 1 of 6
μ
PA2660T1R
Electrical Characteristics (T
A
= 25°C)
Characteristics
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
∗
1
Drain to Source On-state
1
Resistance
∗
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
∗
1
Note:
∗1.
Pulsed
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
R
L
V
GS
PG.
R
G
Wave Form
Symbol
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
G
Q
GS
Q
GD
V
F(S–D)
MIN.
TYP.
MAX.
1.0
±10
1.5
Unit
Test Conditions
V
DS
= 20 V, V
GS
= 0 V
V
GS
=
±10
V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 2.0 A
V
GS
= 4.5 V, I
D
= 2.0 A
V
GS
= 2.5 V, I
D
= 2.0 A
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
I
D
= 2.0 A, V
DD
= 10 V,
V
GS
= 4.5 V, R
G
= 6
Ω
μ
A
μ
A
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
0.5
5.0
33
43
330
66
38
12
6.4
27
6.6
4.5
1.0
1.5
42
62
I
D
= 4.0 A , V
DD
= 16 V,
V
GS
= 10 V
I
F
= 4.0 A, V
GS
= 0 V
1.5
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
V
GS
0
10%
V
GS
90%
I
G
= 2 mA
50
Ω
R
L
V
DD
V
DD
PG.
90%
V
DS
90%
10%
10%
V
GS
0
τ
τ
= 1
μ
s
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
R07DS0999EJ0100 Rev.1.00
Jan 16, 2013
Page 2 of 6
μ
PA2660T1R
Typical
Characteristics (T
A
= 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
140
dT - Percentage of Rated Power - %
P
T
- Total Power Dissipation - W
2.5
Mounted on a glass expoxy board
of 25.4mm x 25.4mm 0.8mmt
PW=5sec
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
2
1.5
2units
1
1unit
0.5
0
0
25
50
75
100
125
150
175
T
A
-Ambient Temperature -
°C
T
A
-Ambient Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
100
I
D(pulse)
=16A
I
D(DC)
=4A
I
D
– Drain Current - A
10
1
Power Dissipation Limited
0.1
0.01
0.01
T
A
=25ºC 2units
Single Pulse
Mounted on glass epoxy board of
25.4 mm x 25.4 mm x 0.8 mmt
0.1
1
10
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance -
°C/W
Single pulse
R
th(ch-a)
=83.3ºC/W(1units 5s)
100
R
th(ch-a)
=54.3ºC/W(2units 5s)
10
1
0.1
R
th(ch-A)
: Mounted on a glass expoxy board of 25.4mm x 25.4mm 0.8mmt
0.01
100
μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
R07DS0999EJ0100 Rev.1.00
Jan 16, 2013
Page 3 of 6
μ
PA2660T1R
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
20
V
GS
=4.5V
10
I
D
–Drain Current - A
15
2.5V
I
D
- Drain Current - A
1
0.1
T
A
=150°C
75°C
25°C
-55°C
10
0.01
5
0.001
Pulsed
0
0
0.5
1
1.5
2
0.0001
0
0.5
1
V
DS
= 10V
Pulsed
1.5
2
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
V
GS(off)
– Gate to Source Cut-off Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1.2
| y
fs
| - Forward Transfer Admittance - S
100
10
1
0.1
S
T
A
= 150°C
75°C
25°C
-55°C
1.0
0.8
0.6
0.4
0.2
0.0
-50
0
50
100
150
0.01
0.001
0.001
V
DS
= 10V
Pulsed
V
DS
= 10V
I
D
= 1mA
0.01
0.1
1
10
100
T
ch
- Channel Temperature -
°C
I
D
– Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance - mΩ
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(on)
– Drain to Source On-state Resistance - mΩ
100
100
I
D
= 2.0A
Pulsed
80
80
60
V
GS
= 2.5V
60
40
4.5V
40
20
20
0
0.1
1
10
100
0
0
2
4
6
8
10
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
R07DS0999EJ0100 Rev.1.00
Jan 16, 2013
Page 4 of 6
μ
PA2660T1R
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
R
DS(on)
–Drain to Source On-state Resistance - mΩ
Pulsed
I
D
= 2.0A
CAPACITANCE vs.
VOLTAGE
C
iss
, C
oss
, C
rss
- Capacitance - pF
1,000
DRAIN TO SOURCE
100
80
C
iss
60
40
V
GS
= 2.5V
100
C
oss
C
rss
V
GS
= 0V
f = 1.0MHz
4.5V
20
0
-50
0
50
100
150
10
0.1
1
10
100
T
ch
- Channel Temperature -
°C
V
DS
– Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
30
12
10
8
6
4
2
I
D
=4.0A
100
V
DS
- Drain to Source Voltage - V
t
d(on)
, t
f
, t
d(off)
, t
r
- Switching Time -
μ
s
t
d(off)
25
20
15
10
5
0
V
DS
V
DD
= 20V
16V
10V
t
d(on)
10
t
r
t
f
1
0.1
1
10
V
DD
= 10V
V
GS
= 4.5V
R
G
= 6Ω
0
0
1
2
3
4
5
6
100
I
D
- Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
Q
G
- Gate Charge - nC
100
I
F
- Diode Forward Current – A
Pulsed
V
GS
=4.5V
10
2.5V
0V
1
0
0.5
1
1.5
V
F(S–D)
- Drain to Source Voltage - V
R07DS0999EJ0100 Rev.1.00
Jan 16, 2013
Page 5 of 6
V
GS
- Gate to Source Voltage - V
V
GS
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