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BUW42PFI

Description
15A, 350V, PNP, Si, POWER TRANSISTOR, TO-218
CategoryDiscrete semiconductor    The transistor   
File Size229KB,4 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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BUW42PFI Overview

15A, 350V, PNP, Si, POWER TRANSISTOR, TO-218

BUW42PFI Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSTMicroelectronics
Reach Compliance Codenot_compliant
Shell connectionISOLATED
Maximum collector current (IC)15 A
Collector-emitter maximum voltage350 V
ConfigurationSINGLE
Minimum DC current gain (hFE)12
JEDEC-95 codeTO-218
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power consumption environment65 W
Maximum power dissipation(Abs)65 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)2100 ns
Maximum opening time (tons)600 ns
VCEsat-Max1.5 V
Base Number Matches1

BUW42PFI Related Products

BUW42PFI BUW42 BUW42APFI
Description 15A, 350V, PNP, Si, POWER TRANSISTOR, TO-218 15A, 350V, PNP, Si, POWER TRANSISTOR, TO-3 15A, 400V, PNP, Si, POWER TRANSISTOR, TO-218
Is it Rohs certified? incompatible incompatible incompatible
Maker STMicroelectronics STMicroelectronics STMicroelectronics
Reach Compliance Code not_compliant not_compliant not_compliant
Shell connection ISOLATED COLLECTOR ISOLATED
Maximum collector current (IC) 15 A 15 A 15 A
Collector-emitter maximum voltage 350 V 350 V 400 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 12 12 12
JEDEC-95 code TO-218 TO-3 TO-218
JESD-30 code R-PSFM-T3 O-MBFM-P2 R-PSFM-T3
JESD-609 code e0 e0 e0
Number of components 1 1 1
Number of terminals 3 2 3
Maximum operating temperature 150 °C 175 °C 150 °C
Package body material PLASTIC/EPOXY METAL PLASTIC/EPOXY
Package shape RECTANGULAR ROUND RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP PNP
Maximum power consumption environment 65 W 150 W 65 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE PIN/PEG THROUGH-HOLE
Terminal location SINGLE BOTTOM SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Maximum off time (toff) 2100 ns 2100 ns 2100 ns
Maximum opening time (tons) 600 ns 600 ns 600 ns
VCEsat-Max 1.5 V 1.5 V 1.5 V
Base Number Matches 1 1 1
Maximum power dissipation(Abs) 65 W - 65 W

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