IRLW610ATM datasheet, PDF - EEWORLD Datasheet

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IRLW610ATM: Descriptionmosfet N-CH 200v 3.3A i2pak; CategoryDiscrete semiconductor The transistor; File Size234KB，7 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/; Environmental Compliance

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IRLW610ATM Overview

mosfet N-CH 200v 3.3A i2pak

IRLW610ATM Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	D2PAK
package instruction	D2PAK-3
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	29 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (Abs) (ID)	3.3 A
Maximum drain current (ID)	3.3 A
Maximum drain-source on-resistance	1.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	33 W
Maximum pulsed drain current (IDM)	12 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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$GYDQFHG 3RZHU 026)(7

FEATURES

♦

Avalanche Rugged Technology

♦

Rugged Gate Oxide Technology

♦

Lower Input Capacitance

♦

Improved Gate Charge

♦

Extended Safe Operating Area

♦

150°C Operating Temperature

♦

Lower Leakage Current: 10µA (Max.) @ V

= 200V

♦

Lower R

DS(ON)

: 1.185Ω (Typ.)

IRLW/I610A

DSS

= 200 V

DS(on)

= 1.5Ω

= 3.3 A

-PAK

1. Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

DSS

dv/dt

Characteristic

Drain-to-Source Voltage

Continuous Drain Current (T

=25°C)

Continuous Drain Current (T

=100°C)

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation (T

=25°C) *

Total Power Dissipation (T

=25°C)

Linear Derating Factor

, T

STG

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8 from case for 5-seconds

(2)

(1)

(3)

(1)

Value

200

3.3

2.1

±20

3.3

3.1

0.26

- 55 to +150

Units

V/ns

W/°C

°C

300

Thermal Resistance

Symbol

θJC

θJA

Characteristic

Junction-to-Case

Junction-to-Ambient *

Junction-to-Ambient

Typ.

Max.

3.81

62.5

°C/W

Units

When mounted on the minimum pad size recommended (PCB Mount).

Rev. B

IRLW610ATM Related Products

	IRLW610ATM	IRLI610ATU
Description	mosfet N-CH 200v 3.3A i2pak	mosfet N-CH 200v 3.3A i2pak
Is it Rohs certified?	conform to	conform to
Parts packaging code	D2PAK	TO-262AA
package instruction	D2PAK-3	I2PAK-3
Contacts	3	3
Reach Compliance Code	not_compliant	_compli
ECCN code	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	29 mJ	29 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V	200 V
Maximum drain current (Abs) (ID)	3.3 A	3.3 A
Maximum drain current (ID)	3.3 A	3.3 A
Maximum drain-source on-resistance	1.5 Ω	1.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB	TO-262AA
JESD-30 code	R-PSSO-G2	R-PSIP-T3
JESD-609 code	e3	e3
Number of components	1	1
Number of terminals	2	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	33 W	33 W
Maximum pulsed drain current (IDM)	12 A	12 A
Certification status	Not Qualified	Not Qualified
surface mount	YES	NO
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Base Number Matches	1	1

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