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IRLI610ATU

Description
mosfet N-CH 200v 3.3A i2pak
CategoryDiscrete semiconductor    The transistor   
File Size234KB,7 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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IRLI610ATU Overview

mosfet N-CH 200v 3.3A i2pak

IRLI610ATU Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeTO-262AA
package instructionI2PAK-3
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)29 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (Abs) (ID)3.3 A
Maximum drain current (ID)3.3 A
Maximum drain-source on-resistance1.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-262AA
JESD-30 codeR-PSIP-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)33 W
Maximum pulsed drain current (IDM)12 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
$GYDQFHG 3RZHU 026)(7
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
150°C Operating Temperature
Lower Leakage Current: 10µA (Max.) @ V
DS
= 200V
Lower R
DS(ON)
: 1.185Ω (Typ.)
IRLW/I610A
BV
DSS
= 200 V
R
DS(on)
= 1.5Ω
I
D
= 3.3 A
D
2
-PAK
2
I
2
-PAK
1
1
3
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25°C)
Continuous Drain Current (T
C
=100°C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25°C) *
Total Power Dissipation (T
C
=25°C)
Linear Derating Factor
T
J
, T
STG
T
L
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
(2)
(1)
(1)
(3)
(1)
Value
200
3.3
2.1
12
±20
29
3.3
3.3
5
3.1
33
0.26
- 55 to +150
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
300
Thermal Resistance
Symbol
R
θJC
R
θJA
R
θJA
Characteristic
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
Typ.
--
--
--
Max.
3.81
40
62.5
°C/W
Units
*
When mounted on the minimum pad size recommended (PCB Mount).
Rev. B
©1999 Fairchild Semiconductor Corporation
1

IRLI610ATU Related Products

IRLI610ATU IRLW610ATM
Description mosfet N-CH 200v 3.3A i2pak mosfet N-CH 200v 3.3A i2pak
Is it Rohs certified? conform to conform to
Parts packaging code TO-262AA D2PAK
package instruction I2PAK-3 D2PAK-3
Contacts 3 3
Reach Compliance Code _compli not_compliant
ECCN code EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 29 mJ 29 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 200 V 200 V
Maximum drain current (Abs) (ID) 3.3 A 3.3 A
Maximum drain current (ID) 3.3 A 3.3 A
Maximum drain-source on-resistance 1.5 Ω 1.5 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-262AA TO-263AB
JESD-30 code R-PSIP-T3 R-PSSO-G2
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 33 W 33 W
Maximum pulsed drain current (IDM) 12 A 12 A
Certification status Not Qualified Not Qualified
surface mount NO YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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