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UPA2766T1A-E1-AY

Description
mosfet N-CH 30v 130a 8son
Categorysemiconductor    Discrete semiconductor   
File Size143KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance  
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mosfet N-CH 30v 130a 8son

Data Sheet
μ
PA2766T1A
N-channel MOSFET
30 V , 130 A , 0.88 mΩ
Description
The
μ
PA2766T1A is N-channel MOS Field Effect Transistor designed for high current switching application.
R07DS0883EJ0102
Rev.1.02
Nov 28, 2012
Features
V
DSS
= 30 V (T
A
= 25°C)
Low on-state resistance
R
DS(on)
= 0.88 mΩ MAX. (V
GS
= 10 V, I
D
= 46 A)
R
DS(on)
= 1.82 mΩ MAX. (V
GS
= 4.5 V, I
D
= 39 A)
4.5 V Gate-drive available
Thin type surface mount package with heat spreader
Halogen free
8-pin HVSON(6051)
Ordering Information
Part No.
LEAD PLATING
Pure Sn
PACKING
Tape 3000 p/reel
Package
8-pin HVSON(6051)
0.1 g TYP.
μ
PA2766T1A-E2-AY
1
Note:
1. Pb-free (This product does not contain Pb in external electrode.)
Absolute Maximum Ratings (T
A
= 25°C)
Item
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
1
Total Power Dissipation
2
Total Power Dissipation (PW = 10 sec)
Total Power Dissipation (T
C
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
3
Single Avalanche Energy
3
2
Symbol
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
P
T3
T
ch
T
stg
I
AS
E
AS
Ratings
30
±20
±130
±312
1.5
4.6
83
150
−55
to
+150
55
303
Unit
V
V
A
A
W
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance
∗2
Channel to Case(Drain) Thermal Resistance
R
th(ch-A)
R
th(ch-C)
83.3
1.5
°C/W
°C/W
Notes:
1. PW
10
μ
s, Duty Cycle
1%
2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
3. Starting T
ch
= 25°C, V
DD
= 15 V, R
G
= 25
Ω,
V
GS
= 20
0 V, L = 100
μ
H
R07DS0883EJ0102 Rev.1.02
Nov 28, 2012
Page 1 of 6
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