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2SA683

Description
RF SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size36KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric Compare View All

2SA683 Overview

RF SMALL SIGNAL TRANSISTOR

2SA683 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature140 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.75 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Base Number Matches1
Transistor
2SA683, 2SA684
Silicon PNP epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SC1383 and 2SC1384
5.9±0.2
Unit: mm
4.9±0.2
q
q
Complementary pair with 2SC1383 and 2SC1384.
Allowing supply with the radial taping.
s
Absolute Maximum Ratings
(Ta=25˚C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–30
–60
–25
–50
–5
–1.5
–1
1
150
–55 ~ +150
Unit
V
2.54±0.15
Collector to
base voltage
Collector to
2SA683
2SA684
2SA683
emitter voltage 2SA684
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
0.45
–0.1
+0.2
13.5±0.5
0.7
–0.2
+0.3
0.7±0.1
8.6±0.2
s
Features
0.45
–0.1
1.27
+0.2
V
A
A
W
˚C
˚C
1.27
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*
h
(Ta=25˚C)
Symbol
I
CBO
Conditions
V
CB
= –20V, I
E
= 0
I
C
= –10µA, I
E
= 0
I
C
= –2mA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CE
= –10V, I
C
= –500mA
V
CE
= –5V, I
C
= –1A
I
C
= –500mA, I
B
= –50mA
I
C
= –500mA, I
B
= –50mA
V
CB
= –10V, I
E
= 50mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
–30
–60
–25
–50
–5
85
50
– 0.2
– 0.85
200
20
30
– 0.4
–1.2
V
V
MHz
pF
340
min
typ
max
– 0.1
Unit
µA
V
2SA683
2SA684
2SA683
2SA684
V
CBO
V
CEO
V
EBO
h
FE1*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
3.2
1
2
3
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
V
V
FE1
Rank classification
Q
85 ~ 170
R
120 ~ 240
S
170 ~ 340
Rank
h
FE1
1

2SA683 Related Products

2SA683 2SA684
Description RF SMALL SIGNAL TRANSISTOR RF SMALL SIGNAL TRANSISTOR
Is it Rohs certified? incompatible incompatible
Parts packaging code TO-92 TO-92
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Contacts 3 3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Maximum collector current (IC) 1 A 1 A
Collector-emitter maximum voltage 25 V 50 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 50 50
JEDEC-95 code TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 140 °C 135 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 0.75 W 1 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz
Base Number Matches 1 1
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