Transistor
2SA683, 2SA684
Silicon PNP epitaxial planer type
For low-frequency power amplification and driver amplification
Complementary to 2SC1383 and 2SC1384
5.9±0.2
Unit: mm
4.9±0.2
q
q
Complementary pair with 2SC1383 and 2SC1384.
Allowing supply with the radial taping.
s
Absolute Maximum Ratings
(Ta=25˚C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–30
–60
–25
–50
–5
–1.5
–1
1
150
–55 ~ +150
Unit
V
2.54±0.15
Collector to
base voltage
Collector to
2SA683
2SA684
2SA683
emitter voltage 2SA684
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
0.45
–0.1
+0.2
13.5±0.5
0.7
–0.2
+0.3
0.7±0.1
8.6±0.2
s
Features
0.45
–0.1
1.27
+0.2
V
A
A
W
˚C
˚C
1.27
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*
h
(Ta=25˚C)
Symbol
I
CBO
Conditions
V
CB
= –20V, I
E
= 0
I
C
= –10µA, I
E
= 0
I
C
= –2mA, I
B
= 0
I
E
= –10µA, I
C
= 0
V
CE
= –10V, I
C
= –500mA
V
CE
= –5V, I
C
= –1A
I
C
= –500mA, I
B
= –50mA
I
C
= –500mA, I
B
= –50mA
V
CB
= –10V, I
E
= 50mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
–30
–60
–25
–50
–5
85
50
– 0.2
– 0.85
200
20
30
– 0.4
–1.2
V
V
MHz
pF
340
min
typ
max
– 0.1
Unit
µA
V
2SA683
2SA684
2SA683
2SA684
V
CBO
V
CEO
V
EBO
h
FE1*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
3.2
1
2
3
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
V
V
FE1
Rank classification
Q
85 ~ 170
R
120 ~ 240
S
170 ~ 340
Rank
h
FE1
1
Transistor
P
C
— Ta
1.2
–1.5
Ta=25˚C
2SA683, 2SA684
I
C
— V
CE
–1.2
V
CE
=–10V
Ta=25˚C
–1.0
I
C
— I
B
Collector power dissipation P
C
(W)
1.0
–1.25
–9mA
–1
–8mA
–7mA
–6mA
–5mA
–4mA
–3mA
–2mA
–1mA
0.8
0.6
– 0.75
0.4
– 0.5
0.2
– 0.25
0
0
20
40
60
80 100 120 140 160
0
0
–2
–4
–6
–8
–10
Collector current I
C
(mA)
I
B
=–10mA
Collector current I
C
(A)
– 0.8
– 0.6
– 0.4
– 0.2
0
0
–2
–4
–6
–8
–10
–12
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base current I
B
(mA)
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
–100
–30
–10
–3
–1
Ta=75˚C
25˚C
–25˚C
V
BE(sat)
— I
C
Base to emitter saturation voltage V
BE(sat)
(V)
I
C
/I
B
=10
–100
–30
–10
–3
–1
Ta=–25˚C
75˚C
25˚C
I
C
/I
B
=10
–600
h
FE
— I
C
V
CE
=–10V
Forward current transfer ratio h
FE
–500
–400
Ta=75˚C
–300
25˚C
–25˚C
– 0.3
– 0.1
– 0.03
– 0.3
– 0.1
– 0.03
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
–200
–100
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
–1
–3
–10
0
– 0.01 – 0.03 – 0.1 – 0.3
–1
–3
–10
Collector current I
C
(A)
Collector current I
C
(A)
Collector current I
C
(A)
f
T
— I
E
200
180
C
ob
— V
CB
50
–120
V
CER
— R
BE
Collector to emitter voltage V
CER
(V)
I
E
=0
f=1MHz
Ta=25˚C
I
C
=–10mA
Ta=25˚C
Collector output capacitance C
ob
(pF)
V
CB
=–10V
Ta=25˚C
45
40
35
30
25
20
15
10
5
0
–1
Transition frequency f
T
(MHz)
160
140
120
100
80
60
40
20
0
1
3
10
30
100
–100
–80
–60
2SA684
–40
2SA683
–20
–3
–10
–30
–100
0
0.1
0.3
1
3
10
30
100
Emitter current I
E
(mA)
Collector to base voltage V
CB
(V)
Base to emitter resistance R
BE
(kΩ)
2
Transistor
I
CEO
— Ta
10
4
V
CE
=–10V
–10
–3
I
CP
10
3
2SA683, 2SA684
Area of safe operation (ASO)
Single pulse
Ta=25˚C
Collector current I
C
(A)
–1
t=10ms
I
C
t=1s
I
CEO
(Ta)
I
CEO
(Ta=25˚C)
– 0.3
– 0.1
10
2
– 0.03
– 0.01
2SA683
–1
–3
–10
– 0.003
1
0
20
40
60
80 100 120 140 160
– 0.001
– 0.1 – 0.3
–30
2SA684
–100
10
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
3
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