IC,SYNC SRAM,256X4,CMOS,DIP,18PIN,CERAMIC
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Objectid | 1125526185 |
| Reach Compliance Code | not_compliant |
| ECCN code | 3A001.A.2.C |
| YTEOL | 0 |
| Maximum access time | 300 ns |
| JESD-30 code | R-XDIP-T18 |
| memory density | 1024 bit |
| Memory IC Type | STANDARD SRAM |
| memory width | 4 |
| Number of terminals | 18 |
| word count | 256 words |
| character code | 256 |
| Operating mode | SYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 256X4 |
| Output characteristics | 3-STATE |
| Package body material | CERAMIC |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP18,.3 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Certification status | Not Qualified |
| Maximum standby current | 0.00001 A |
| Minimum standby current | 2 V |
| Maximum slew rate | 0.006 mA |
| surface mount | NO |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
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