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EDI84256CS35NB

Description
Standard SRAM, 256KX4, 35ns, CMOS, CDSO28,
Categorystorage    storage   
File Size496KB,8 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

EDI84256CS35NB Overview

Standard SRAM, 256KX4, 35ns, CMOS, CDSO28,

EDI84256CS35NB Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid1902867713
Reach Compliance Codeunknown
ECCN code3A001.A.2.C
YTEOL0
Maximum access time35 ns
I/O typeCOMMON
JESD-30 codeR-XDSO-J28
JESD-609 codee0
memory density1048576 bit
Memory IC TypeSTANDARD SRAM
memory width4
Number of terminals28
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize256KX4
Output characteristics3-STATE
Package body materialCERAMIC
encapsulated codeSOJ
Encapsulate equivalent codeSOJ28,.44
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
Certification statusNot Qualified
Filter level38535Q/M;38534H;883B
Maximum standby current0.005 A
Minimum standby current4.5 V
Maximum slew rate0.18 mA
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationDUAL
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