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BR24G02F-3AE2

Description
EEPROM, 256X8, Serial, CMOS, PDSO8, SOP-8
Categorystorage    storage   
File Size895KB,36 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Download Datasheet Parametric View All

BR24G02F-3AE2 Overview

EEPROM, 256X8, Serial, CMOS, PDSO8, SOP-8

BR24G02F-3AE2 Parametric

Parameter NameAttribute value
Objectid1335361986
package instructionSOP-8
Reach Compliance Codecompliant
ECCN codeEAR99
YTEOL5.7
Other featuresSEATED HT-CALCULATED, ALSO AVAILABLE 1.6-1.7V AT 0.4MHZ
Maximum clock frequency (fCLK)1 MHz
JESD-30 codeR-PDSO-G8
length5 mm
memory density2048 bit
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals8
word count256 words
character code256
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256X8
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialSERIAL
Maximum seat height1.71 mm
Serial bus typeI2C
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)1.7 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
width4.4 mm
Maximum write cycle time (tWC)5 ms
Datasheet
Serial EEPROM series Standard EEPROM
I
2
C BUS EEPROM (2-Wire)
BR24G02-3A
●General
Description
2
BR24G02-3A is a serial EEPROM of I C BUS interface method
●Features
All controls available by 2 ports of serial clock(SCL) and
serial data(SDA)
Other devices than EEPROM can be connected to the
same port, saving microcontroller port
1.6V to 5.5V single power source action most suitable
for battery use
1MHz action is possible (1.7V to 5.5V)
Up to 8 bytes in page write mode
Self-timed programming cycle
Low current consumption
Prevention of write mistake
Write (write protect) function added
Prevention of write mistake at low voltage
More than 1 million write cycles
More than 40 years data retention
Noise filter built in SCL / SDA terminal
Initial delivery state FFh
●Packages
W(Typ.) x D(Typ.)x H(Max.)
DIP-T8
9.30mm x 6.50mm x 7.10mm
TSSOP-B8J
3.00mm x 4.90mm x 1.10mm
SOP8
5.00mm x 6.20mm x 1.71mm
MSOP8
2.90mm x 4.00mm x 0.90mm
SOP-J8
4.90mm x 6.00mm x 1.65mm
VSON008X2030
2.00mm x 3.00mm x 0.60mm
TSSOP-B8
3.00mm x 6.40mm x 1.20mm
Figure 1.
●BR24G02-3A
Capacity
Bit Format
Type
BR24G02-3A
BR24G02F-3A
BR24G02FJ-3A
2Kbit
256×8
BR24G02FVT-3A
BR24G02FVJ-3A
BR24G02FVM-3A
BR24G02NUX-3A
1.6V to 5.5V
Power Source
Voltage
Package
DIP-T8
SOP8
SOP-J8
TSSOP-B8
TSSOP-B8J
MSOP8
VSON008X2030
○Product
structure:Silicon monolithic integrated circuit
.
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
○This
product is not designed protection against radioactive rays
1/33
TSZ02201-0R2R0G100570-1-2
31.May.2013 REV.002

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