PD- 96152A
IRF7754GPbF
HEXFET
®
Power MOSFET
l
l
l
l
l
l
l
Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile (< 1.2mm)
Available in Tape & Reel
Lead-Free
Halogen-Free
V
DSS
-12V
R
DS(on)
max
25mΩ@V
GS
= -4.5V
34mΩ@V
GS
= -2.5V
49mΩ@V
GS
= -1.8V
I
D
-
5.4A
-
4.6A
-
3.9A
Description
HEXFET
®
Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined
with the ruggedized device design, that International Rectifier
is well known for,
provides thedesigner with an extremely
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efficient and reliable device for
management.
battery and load
TSSOP-8
The TSSOP-8 package has 45% less footprint area than the
standard SO-8. This makes the TSSOP-8 an ideal device for
applications where printed circuit board space is at a premium.
The low profile (<1.2mm) allows it to fit easily into extremely
thin environments such as portable electronics and PCMCIA
cards.
Absolute Maximum Ratings
Parameter
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
V
GS
T
J
, T
STG
Drain-Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
-12
-5.5
-4.4
-22
1
0.64
0.01
±8
-55 to +150
Units
V
A
W
W
W/°C
V
°C
Thermal Resistance
Parameter
R
θJA
Maximum Junction-to-Ambient
Max.
125
Units
°C/W
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1
05/14/09
IRF7754GPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-12
–––
–––
-0.4
16
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.008
–––
–––
–––
–––
–––
–––
–––
–––
–––
22
3.9
4.8
9.8
18
267
191
1984
618
385
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= -250µA
––– V/°C Reference to 25°C, I
D
= -1mA
25
V
GS
= -4.5V, I
D
= -5.4A
mΩ V
GS
= -2.5V, I
D
= -4.6A
34
49
V
GS
= -1.8V, I
D
= -3.9A
-0.9
V
V
DS
= V
GS
, I
D
= -250µA
–––
S
V
DS
= -10V, I
D
= -5.4A
-1.0
V
DS
= -9.6V, V
GS
= 0V
µA
-25
V
DS
= -9.6V, V
GS
= 0V, T
J
= 70°C
-100
nA V
GS
= -8V
100
V
GS
= 8V
–––
I
D
= -5.4A
–––
nC
V
DS
= -6V
–––
V
GS
= -4.5V
14.7
V
DD
= -6V, V
GS
= -4.5V
ns
27
I
D
= -1.0A
401
R
D
= 6Ω
287
R
G
= 6Ω
–––
V
GS
= 0V
–––
pF
V
DS
= -6V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
39
27
-1.0
A
-22
-1.2
59
41
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -1.0A, V
GS
= 0V
T
J
= 25°C, I
F
= -1.0A
di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
When mounted on 1 inch square copper board, t < 10 sec.
Pulse width
≤
400µs; duty cycle
≤
2%.
2
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IRF7754GPbF
100
100
VGS
TOP
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
VGS
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
TOP
-ID, Drain-to-Source Current (A)
10
-ID, Drain-to-Source Current (A)
10
1
0.1
-1.0V
1
-1.0V
20µs PULSE WIDTH
Tj = 25°C
0.01
0.1
1
10
100
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
-VDS, Drain-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
100
2.0
I
D
= -5.5A
-I
D
, Drain-to-Source Current (A)
10
T
J
= 150
°
C
1.5
1.0
T
J
= 25
°
C
1
0.5
0.1
1.0
V DS= -10V
20µs PULSE WIDTH
1.2
1.4
1.6
1.8
2.0
0.0
-60 -40 -20
V
GS
= -4.5V
0
20 40 60 80 100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF7754GPbF
3200
2800
6
-V
GS
, Gate-to-Source Voltage (V)
C, Capacitance(pF)
2400
2000
1600
1200
800
400
0
1
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = C
gd
Coss = Cds + Cgd
I
D
=
-5.4A
V
DS
=-9.6V
V
DS
=-6V
5
Ciss
4
3
Coss
Crss
2
1
10
100
0
0
5
10
15
20
25
30
-VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
T
J
= 150
°
C
T
J
= 25
°
C
-I
D
, Drain Current (A)
I
10
1ms
1
10ms
0.1
0.2
V
GS
= 0 V
0.4
0.6
0.8
1.0
-V
SD
,Source-to-Drain Voltage (V)
1
0.1
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7754GPbF
6.0
V
DS
5.0
R
D
V
GS
R
G
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
-I
D
, Drain Current (A)
D.U.T.
+
4.0
3.0
2.0
Fig 10a.
Switching Time Test Circuit
t
d(on)
t
r
t
d(off)
t
f
1.0
V
GS
0.0
25
50
T
C
, Case Temperature ( ° C)
75
100
125
150
10%
Fig 9.
Maximum Drain Current Vs.
Case Temperature
90%
V
DS
Fig 10b.
Switching Time Waveforms
1000
Thermal Response (Z
thJA
)
100
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.1
1
10
100
1000
1
0.1
0.0001
0.001
0.01
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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V
DD
5
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