AOD4126/AOI4126
100V N-Channel MOSFET
SDMOS
TM
General Description
The AOD4126&AOI4126 are fabricated with SDMOS
TM
trench technology that combines excellent R
DS(ON)
with
low gate charge.The result is outstanding efficiency with
controlled switching behavior. This universal technology is
well suited for PWM, load switching and general purpose
applications.
Product Summary
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 7V)
100V
43A
< 24mΩ
< 30mΩ
100% UIS Tested
100% R
g
Tested
TO252
DPAK
Top View
Bottom View
D
D
Top View
TO-251A
IPAK
D
Bottom View
D
G
S
G
S
G
S
G
D
S
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
B
Pulsed Drain Current
Continuous Drain
Current
A
Avalanche Current
C
Avalanche energy L=0.1mH
T
C
=25°
C
Power Dissipation
Power Dissipation
B
C
C
Maximum
100
±25
43
30
100
7.5
6
28
39
100
50
3
1.9
-55 to 175
Units
V
V
A
V
GS
T
C
=25°
C
T
C
=100°
C
C
T
A
=25°
T
A
=70°
C
I
D
I
DM
I
DSM
I
AS
, I
AR
E
AS
, E
AR
P
D
P
DSM
T
J
, T
STG
A
A
mJ
W
W
°
C
C
T
C
=100°
T
A
=25°
C
T
A
=70°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
8
35
1
Max
10
42
1.5
Units
°
C/W
°
C/W
°
C/W
Rev1 : May 2012
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Page 1 of 7
AOD4126/AOI4126
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=100V, V
GS
=0V
C
T
J
=55°
V
DS
=0V, V
GS
= ±25V
V
DS
=V
GS
I
D
=250µA
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=20A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
=7V, I
D
=15A
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=20A
I
S
=1A,V
GS
=0V
T
J
=125°
C
2
100
19
36
23.5
34
0.66
1
40
1400
V
GS
=0V, V
DS
=50V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
115
33
0.3
14
V
GS
=10V, V
DS
=50V, I
D
=20A
4
6
V
GS
=10V, V
DS
=50V, R
L
=2.5Ω,
R
GEN
=3Ω
I
F
=20A, dI/dt=500A/µs
1in
2
Min
100
Typ
Max
Units
V
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
10
50
100
3.3
4
24
43
30
µA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
Maximum Body-Diode Continuous Current
1770
165
55
0.65
28
9
10
12
4
17
5
12
60
20
82
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
2200
214
80
1.0
42
14
14
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=20A, dI/dt=500A/µs
26
110
ns
nC
A. The value of R
θJA
is measured with the device mounted on
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C. Ratings are based on low frequency and duty cycles to keep
initial T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1 : May 2012
www.aosmd.com
Page 2 of 7
AOD4126/AOI4126
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
10V
8V
7V
50
40
I
D
(A)
6.5V
I
D
(A)
40
30
20
125°C
V
GS
=6V
10
0
0
1
2
3
4
5
3
4
5
6
7
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
25°C
60
V
DS
=5V
20
0
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
30
27
V
GS
=7V
R
DS(ON)
(mΩ)
Ω
24
21
18
15
0
5
10
15
20
25
30
35
40
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
V
GS
=10V
Normalized On-Resistance
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0
25
50
75
100
125
150
175
200
V
GS
=7V
I
D
=15A
V
GS
=10V
I
D
=20A
17
5
2
10
0
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
50
I
D
=20A
40
R
DS(ON)
(mΩ)
Ω
125°C
30
I
S
(A)
1.0E+02
1.0E+01
1.0E+00
40
1.0E-01
1.0E-02
1.0E-03
25°C
125°C
20
25°C
10
6
7
8
9
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev 1: May 2012
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Page 3 of 7
AOD4126/AOI4126
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=50V
I
D
=20A
Capacitance (pF)
2500
8
2000
C
iss
V
GS
(Volts)
6
1500
4
1000
C
oss
C
rss
2
500
0
0
15
20
25
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
5
10
30
0
0
40
60
80
V
DS
(Volts)
Figure 8: Capacitance Characteristics
20
100
1000.0
100.0
I
D
(Amps)
10.0
1.0
0.1
0.0
0.01
0.1
1
10
V
DS
(Volts)
100
1000
10µs
1000
800
T
J(Max)
=175°C
T
C
=25°C
10µs
Power (W)
R
DS(ON)
limited
100µs
1ms
DC
10ms
600
400
200
0
0.0001
17
5
2
10
T
J(Max)
=175°C
T
C
=25°C
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
0.001
0.01
0.1
1
10
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=1.5°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
P
D
T
on
T
Rev 1: May 2012
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Page 4 of 7
AOD4126/AOI4126
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
I
AR
(A) Peak Avalanche Current
120
Power Dissipation (W)
90
T
A
=25°C
T
A
=100°C
60
30
T
A
=150°C
10
0.000001
T
A
=125°C
0
0.00001
0.0001
0.001
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability
(Note C)
0
75
100
125
150
T
CASE
(°C)
°
Figure 13: Power De-rating (Note F)
25
50
175
60
50
Current rating I
D
(A)
40
30
20
10
0
0
75
100
125
150
T
CASE
(°C)
°
Figure 14: Current De-rating (Note F)
25
50
175
1000
T
A
=25°C
100
Power (W)
10
17
5
2
10
1
0.01
1
100
0
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=42°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
40
0.1
0.01
P
D
Single Pulse
T
on
T
100
1000
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 1: May 2012
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Page 5 of 7
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