DG384A_MIL/387A_MIL
Vishay Siliconix
CMOS Analog Switches
(Obsolete for non-hermetic. See DG381B Series for pin-for-pin replacements.)
FEATURES
D
D
D
D
BENEFITS
APPLICATIONS
"15-V
Input Range
D
Full Rail-to-Rail Analog Signal Range
D
Low Level Switching Circuits
Low r
DS(on)
: 30
W
D
Minimizes Signal Error
D
Programmable Gain Amplifiers
Single Supply Operation
D
Low Power Dissipation
D
Portable and Battery Powered
Sytems
Pin and Function Compatible with the
JFET DG180 Family
DESCRIPTION
The DG384A_MIL and DG387A_MIL monolithic CMOS
analog switches
were designed for applications in
instrumentation, communications, and process control. This
series is suited for applications requiring fast switching and
nearly flat on-resistance over the entire voltage range.
switches are ideal for battery powered applications, without
sacrificing switching speed. Break-before-make switching
action is guaranteed, and an epitaxial layer prevents latchup.
Single supply operation is allowed by connecting the V– rail to
0 V.
Designed on Vishay Siliconix’ PLUS-40 CMOS process,
these devices achieve low power consumption (3.5 mW
typical) and excellent on/off switch performance. These
Each switch conducts equally well in both directions when on,
and blocks up to the supply voltage when off. These switches
are CMOS and quasi TTL logic compatible.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG384A_MIL
Dual-In-Line
D
1
NC
D
3
S
3
S
4
D
4
NC
D
2
S
1
IN
1
V–
GND
0
5
6
7
8
Top View
12
11
10
9
NC
V+
IN
2
S
2
1
Logic “0”
v
0.8 V
Logic “1”
w
4 V
OFF
ON
1
2
3
4
16
15
14
13
TRUTH TABLE
Logic
Switch
Document Number: 71679
S-04302—Rev. A, 16-Jul-01
www.vishay.com
1
DG384A_MIL/387A_MIL
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG387A_MIL
Dual-In-Line
Metal Can
NC
NC
D
1
S
1
IN
V+
NC
1
2
3
4
5
6
7
14
13
12
11
10
9
8
NC
NC
D2
S
2
NC
V–
GND
IN
3
4
V+
(Substrate and Case)
5
NC
Top View
Top View
6
GND
7
V–
S
1
2
8
D
1
10
1
9
NC
D
2
DG387A_MIL
S
2
TRUTH TABLE
Logic
0
1
SW
1
ON
OFF
Logic “0”
v
0.8 V
Logic “1”
w
4 V
SW
2
OFF
ON
ORDERING INFORMATION
Temp Range
DG384A_MIL
–55 to 125_C
16-Pin CerDIP
DG384AAK/883
5962-9678801QEA
Package
Part Number
DG387A_MIL
–55 to 125_C
_
14-Pin CerDIP
10-Pin Metal Can
DG387AAK/883
DG387AAA/883
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Document Number: 71679
S-04302—Rev. A, 16-Jul-01
DG384A_MIL/387A_MIL
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Voltages Referenced to V–
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Digital Inputs
a
, V
S
, V
D
. . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) +2V or
30 mA, whichever occurs first
Current, Any Terminal Except S or D . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
(Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Storage Temperature
(AA, AK, Suffix) . . . . . . . . . . . . . . –65 to 150_C
Power Dissipation
b
14-Pin CerDIP
c
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 825 mW
10-Pin Metal Can
d
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450 mW
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V– will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 11 mW/_C above 75_C
d. Derate 6 mW/_C above 75_C
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
S
V–
V
IN
Level
Shift/
Drive
V+
GND
D
V–
FIGURE 1.
Document Number: 71679
S-04302—Rev. A, 16-Jul-01
www.vishay.com
3
DG384A_MIL/387A_MIL
Vishay Siliconix
SPECIFICATIONS
a
Test Conditions Unless Specified
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source
On-Resistance
Source Off
Leakage Current
Drain Off
Leakage Current
Drain On
Leakage Current
V
ANALOG
r
DS(on)
I
S(off)
I
D(off)
I
D(on)
V
D
=
"10
V, I
S
= –10 mA
V
S
=
"14
V, V
D
=
#14
V
V
S
=
"14
V, V
D
=
#14
V
V
D
= V
S
=
"14
V
Full
Room
Full
Room
Hot
Room
Hot
Room
Hot
–1
–100
–1
–100
–11
–100
–15
30
"0.1
"0.1
"0.1
15
50
75
1
100
1
100
1
100
nA
V
W
Limits
Temp
b
Min
c
Typ
d
Max
c
Unit
Symbol
V+ = 15 V, V– = –15 V
V
IN
= 0.8 V or 4 V
f
Digital Control
Input Current with
Input Voltage High
Input Current with
Input Voltage Low
V
IN
= 5 V
I
INH
V
IN
= 15 V
I
INL
V
IN
= 0 V
Room
Full
Room
Full
Room
Full
–1
–1
–1
–1
–0.001
0.001
–0.001
1
1
mA
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Charge Injection
Source-Off Capacitance
Drain-Off Capacitance
Channel-On Capacitance
Input Capacitance
Off-Isolation
Crosstalk
(Channel-to-Channel)
t
ON
t
OFF
t
OPEN
Q
C
S(off)
C
D(off)
C
D(on)
C
IN
OIRR
X
TALK
f = 1 MHz
V
IN
= 0 V
V
IN
= 15 V
f = 1 MHz; V
S
, V
D
= 0 V
Room
See Figure 2
See Figure 3
C
L
= 0.01
mF,
R
gen
= 0
W
V
gen
= 0 V
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
150
130
50
10
14
14
40
6
7
62
74
dB
pF
pC
300
250
ns
V
IN
= 0 V, R
L
= 1 kW
W
V
S
= 1 V
rms
, f = 500 kHz
Power Supplies
Positive Supply Current
Negative Supply Current
Positive Supply Current
Negative Supply Current
I+
I–
I+
V
IN
= 0.8 V (All Inputs)
I–
V
IN
= 4 V (One Input)
(All Others = 0)
Room
Full
Room
Full
Room
Full
Room
Full
–10
–100
–10
–100
0.23
0.5
1.0
mA
–0.001
0.001
–0.001
10
100
mA
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
e. Guaranteed by design, not subject to production test.
f.
V
IN
= input voltage to perform proper function.
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Document Number: 71679
S-04302—Rev. A, 16-Jul-01
DG384A_MIL/387A_MIL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
r
DS(on)
vs. V
D
and Power Supply
100
r DS(on) Drain-Source On-Resistance (
W
)
–
r DS(on) Drain-Source On-Resistance (
W
)
–
T
A
= 25_C
80
"5
V
60
"7.5
V
40
"10
V
"15
V
20
"20
V
60
V+ = 15 V
V– = –15 V
50
r
DS(on)
vs. V
D
and Temperature
40
125_C
30
25_C
20
–55_C
10
–15
–10
–5
0
5
10
15
0
–20
–15
–10
–5
0
5
10
15
20
V
D
– Drain Voltage (V)
V
D
– Drain Voltage (V)
Charge Injection vs. Analog Voltage (V
S)
50
V+ = 15 V
V– = –15 V
C
L
= 1 nF
500
Switching Time and Break-Before-Make
Time vs. Positive Supply Voltage
V– = –15 V
T
A
= 25_C
V
INH
= 4 V
V
INL
= 0 V
t
OFF
300
40
400
t ON , t OFF (ns)
30
Q (pC)
20
200
t
ON
10
100
t
OPEN
DG301/303 Only
0
–15
0
–10
–5
0
5
10
15
0
5
10
15
V
S
– Source Voltage (V)
V+ – Positive Supply Voltage (V)
Input Switching Threshold
vs. Positive Supply Voltage
5
V– = 0 to –15V
T
A
= 25_C
4
400
500
Supply Current vs. Temperature
300
3
V T (V)
I+, I– ( A)
V+ = 15 V
V– = –15 V
V
IN
= 4 V (One Input)
(All Other = 0 V)
I+
200
2
1
0
5
10
V+ – Positive Supply Voltage (V)
Document Number: 71679
S-04302—Rev. A, 16-Jul-01
ÇÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇÇ
ÇÇÇÇÇÇÇÇ
15
100
I–
0
–100
–55
–35
–15
5
25
45
65
85
105
125
Temperature (_C)
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