PD -91580A
IRG4PH30K
INSULATED GATE BIPOLAR TRANSISTOR
Features
• High short circuit rating optimized for motor control,
t
sc
=10µs, V
CC
= 720V , T
J
= 125°C,
V
GE
= 15V
• Combines low conduction losses with high
switching speed
• Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
C
Short Circuit Rated
UltraFast IGBT
V
CES
= 1200V
G
E
V
CE(on) typ.
=
3.10V
@V
GE
= 15V, I
C
= 10A
n-channel
Benefits
• As a Freewheeling Diode we recommend our
HEXFRED
TM
ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
• Latest generation 4 IGBT's offer highest power
density motor controls possible
• This part replaces the IRGPH30K and IRGPH30M
devices
TO-247AC
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
t
sc
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Q
Clamped Inductive Load Current
R
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
1200
20
10
40
40
10
±20
121
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Units
V
A
µs
V
mJ
W
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
0.24
–––
6 (0.21)
Max.
1.2
–––
40
–––
Units
°C/W
g (oz)
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1
2/7/2000
IRG4PH30K
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Collector-to-Emitter Breakdown Voltage
1200 —
—
V
V
GE
= 0V, I
C
= 250µA
V
(BR)CES
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage
T
18
—
—
V
V
GE
= 0V, I
C
= 1.0A
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage —
0.19 —
V/°C V
GE
= 0V, I
C
= 2.0mA
— 3.10 4.2
I
C
= 10A
V
GE
= 15V
V
CE(ON)
Collector-to-Emitter Saturation Voltage
— 3.90 —
I
C
= 20A
See Fig.2, 5
V
— 3.01 —
I
C
= 10A , T
J
= 150°C
V
GE(th)
Gate Threshold Voltage
3.0
—
6.0
V
CE
= V
GE
, I
C
= 250µA
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage
—
-12
— mV/°C V
CE
= V
GE
, I
C
= 250µA
g
fe
Forward Transconductance
U
4.3
6.5
—
S
V
CE
=
100 V, I
C
= 10A
—
—
250
V
GE
= 0V, V
CE
= 1200V
I
CES
Zero Gate Voltage Collector Current
µA
—
—
2.0
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
—
— 2000
V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current
—
— ±100
nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
sc
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
10
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
53
80
I
C
= 10A
9.0
14
nC
V
CC
= 400V
See Fig.8
21
32
V
GE
= 15V
28
—
23
—
T
J
= 25°C
ns
200 300
I
C
=10A, V
CC
= 960V
110 170
V
GE
= 15V, R
G
= 23Ω
0.64 —
Energy losses include "tail"
0.92 —
mJ
See Fig. 9,10,14
1.56 2.4
—
—
µs
V
CC
= 720V, T
J
= 125°C
V
GE
= 15V, R
G
= 23Ω
27
—
T
J
= 150°C,
26
—
I
C
= 10A, V
CC
= 960V
ns
310 —
V
GE
= 15V, R
G
= 23Ω
330 —
Energy losses include "tail"
3.18 —
mJ
See Fig. 10,11,14
13
—
nH
Measured 5mm from package
800 —
V
GE
= 0V
60
—
pF
V
CC
= 30V
See Fig. 7
14
—
ƒ = 1.0MHz
Q
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
S
Repetitive rating; pulse width limited by maximum
junction temperature.
R
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, R
G
=23Ω,
(See fig. 13a)
T
Pulse width
≤
80µs; duty factor
≤
0.1%.
U
Pulse width 5.0µs, single shot.
2
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IRG4PH30K
30
F o r bo t h :
25
Tria n gu lar w ave :
Load Current ( A )
20
D u ty c yc le : 50%
T
J
= 1 2 5°C
T
s in k
= 9 0 °C
G a te d rive as sp ec ified
Po wer D issipat io n =
24
4 0W
C la m p v o lta g e :
8 0 % o f rate d
S q u a re wa ve :
15
6 0 % o f ra te d
vo l t a g e
10
5
Id e a l d io de s
0
0.1
1
10
A
100
f, Frequency (kHz)
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
100
100
I
C
, Collector-to-Emitter Current (A)
I
C
, Collector-to-Emitter Current (A)
10
10
T
J
= 150
°
C
T
J
= 25
°
C
V
= 15V
20µs PULSE WIDTH
GE
1
10
T
J
= 150
°
C
T
J
= 25
°
C
V
= 50V
5µs PULSE WIDTH
CC
6
8
10
12
14
1
1
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
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3
IRG4PH30K
20
5.0
V
CE
, Collector-to-Emitter Voltage(V)
V
= 15V
80 us PULSE WIDTH
GE
Maximum DC Collector Current(A)
4.5
15
I
C
= 20 A
4.0
10
3.5
I
C
= 10 A
3.0
5
I
C
= 5 A
2.5
0
25
50
75
100
125
150
2.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T
C
, Case Temperature (
°
C)
T
J
, Junction Temperature (
°
C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
0.01
0.00001
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
1
P
DM
t
1
t
2
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PH30K
1200
1000
V
GE
, Gate-to-Emitter Voltage (V)
C, Capacitance (pF)
800
C
ies
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc ,
C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CC
= 400V
I
C
= 10A
15
600
10
400
200
C
oes
C
res
5
0
1
10
100
0
0
10
20
30
40
50
60
V
CE
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
3.0
2.5
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V
CC
= 960V
V
GE
= 15V
T
J
= 25
°
C
I
C
= 10A
100
23
Ω
R
G
= Ohm
V
GE
= 15V
V
CC
= 960V
10
I
C
=
20
A
I
C
=
10
A
I
C
=
5
A
2.0
1
1.5
1.0
0
10
20
30
40
50
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
R
G
Gate Resistance (Ohm)
R
G
,
,
Gate Resistance (
Ω )
T
J
, Junction Temperature (
°
C )
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
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