TPC6002 datasheet, PDF - EEWORLD Datasheet

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TPC6002: DescriptionTOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII); CategoryDiscrete semiconductor The transistor; File Size152KB，6 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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TPC6002 Overview

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

TPC6002 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Toshiba Semiconductor
package instruction	2-3T1A, 6 PIN
Contacts	6
Reach Compliance Code	unknown
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	6 A
Maximum drain-source on-resistance	0.05 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G6
Number of components	1
Number of terminals	6
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Base Number Matches	1

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TPC6002

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

TPC6002

Notebook PC Applications

Portable Equipment Applications

Low drain-source ON resistance: R

DS (ON)

= 25 mΩ (typ.)

High forward transfer admittance: |Y

| =

S (typ.)

Low leakage current: I

DSS

µA (max) (V

= 30 V)

Enhancement-model: V

1.3

to 2.5 V (V

V, I

mA)

Unit: mm

Maximum Ratings

(Ta

25°C)

Characteristics

Drain-source voltage

Drain-gate voltage (R

20 kW)

Gate-source voltage

Drain current

(Note 1)

Pulse

(Note 1)

Drain power dissipation

5 s)

(Note 2a)

Drain power dissipation

5 s)

(Note 2b)

Single pulse avalanche energy (Note 3)

Avalanche current

Repetitive avalanche energy

Channel temperature

Storage temperature range

(Note 4)

Symbol

DSS

DGR

GSS

Rating

±20

Unit

JEDEC

―

2-3T1A

2.2

JEITA

TOSHIBA

stg

0.7

5.8

0.22

150

-55

to 150

°C

Weight: 0.011 g (typ.)

Circuit Configuration

Thermal Characteristics

Characteristics

Thermal resistance, channel to ambient

5 s)

(Note 2a)

Symbol

th (ch-a)

Max

56.8

Unit

°C/W

Marking

(Note 5)

Thermal resistance, channel to ambient

5 s)

(Note 2b)

th (ch-a)

178.5

°C/W

Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next

page.

This transistor is an electrostatically sensitive device. Please handle it

with caution.

S2B

2001-11-07

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