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TPC8204

Description
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
CategoryDiscrete semiconductor    The transistor   
File Size336KB,7 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

TPC8204 Overview

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)

TPC8204 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
package instruction2-6J1E, 8 PIN
Contacts8
Reach Compliance Codeunknow
Avalanche Energy Efficiency Rating (Eas)46.8 mJ
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)6 A
Maximum drain-source on-resistance0.045 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)24 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
TPC8204
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
TPC8204
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs
l
Small footprint due to small and thin package
l
Low drain−source ON resistance
l
Low leakage current
l
Enhancement−mode
: R
DS (ON)
=
16
mΩ (typ.)
l
High forward transfer admittance : |Y
fs
| =
18
S (typ.)
: I
DSS
=
10
µA (max) (V
DS
= 20 V)
: V
th
= 0.5~1.2 V (V
DS
=
10
V, I
D
= 200 µA)
Unit: mm
Maximum Ratings
(Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R
GS
= 20kΩ)
Gate-source voltage
Drain curren
DC
Pulse
Single-device
operation
(Note 3a)
(Note 1)
Symbol
V
DSS
V
DGR
V
GSS
I
D
I
DP
P
D (1)
Rating
20
20
±12
6
24
1.5
W
P
D(2)
1.1
Unit
V
V
V
A
JEDEC
JEITA
TOSHIBA
2-6J1E
Drain power
dissipation
(t = 10s)
Single-device value
(Note 2a) at dual operation
(Note 3b)
Drain power
dissipation
(t = 10s)
Single-device value
(Note 2b) at dual operation
(Note 3b)
Single pulse avalanche energy
(Note 4)
Avalanche current
(Note 1)
Single-device
operation
(Note 3a)
Weight: 0.080 g (typ.)
Circuit Configuration
P
D (1)
0.75
W
P
D (2)
E
AS
I
AR
E
AR
T
ch
T
stg
0.45
46.8
6
0.1
150
−55~150
mJ
A
mJ
°C
°C
Repetitive avalanche energy
Single-device value at operation
(Note 2a, Note 3b, Note 5)
Channel temperature
Storage temperature range
Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5) please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2003-02-18
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