2N3866AUB
Silicon NPN Transistor
Data Sheet
Description
S
EMICOA Corporation
offers:
•
Screening and processing per MIL-PRF-19500
Appendix E
•
JAN level (2N3866AUBJ)
•
JANTX level (2N3866AUBJX)
•
JANTXV level (2N3866AUBJV)
•
JANS level (2N3866AUBJS)
•
JANSR level (2N3866AUBJSR)
•
JANSF level (2N3866AUBJSF)
•
QCI to the applicable level
•
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
•
Radiation testing (total dose) upon request
Applications
•
General purpose high frequency
•
VHF-UHF amplifier transistor
•
NPN silicon transistor
Features
•
•
•
•
Hermetically sealed Cersot ceramic
Also available in chip configuration
Chip geometry 1008
Reference document:
MIL-PRF-19500/398
Benefits
Please contact S
EMICOA
for special configurations
www.SEMICOA.com or (714) 979-1900
•
Qualification Levels: JAN, JANTX,
JANTXV
,
JANS
, JANSR and JANSF
•
Radiation testing available
T
C
= 25°C unless otherwise specified
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, T
A
= 25°C
Derate linearly above 25°C
Thermal Resistance
Operating Junction Temperature
Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
Rating
30
60
3.5
400
0.5
2.86
325
-65 to +200
Unit
Volts
Volts
Volts
mA
W
mW/°C
°C/W
°C
R
θJA
T
J
T
STG
Copyright 20
10
Rev. F
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
S
EMICOA Corporation
Page 1 of 2
www.SEMICOA.com
2N3866AUB
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25°C
Off Characteristics
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEO
I
CES1
I
CES2
Test Conditions
I
C
= 100
µA
I
C
= 5 mA
I
E
= 100
µA
V
CE
= 28 Volts
V
CE
= 55 Volts
V
CE
= 55 Volts, T
A
= 150°C
Min
60
30
3.5
20
100
2
Typ
Max
Units
Volts
Volts
Volts
µA
µA
mA
On Characteristics
Parameter
DC Current Gain
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Open Circuit Output Capacitance
Collector Efficiency
Power Output
Symbol
|h
FE
|
C
OBO
η
1
η
2
P
1out
P
1out
Test Conditions
V
CE
= 15 Volts, I
C
= 50 mA,
f = 200 MHz
V
CB
= 28 Volts, I
E
= 0 mA,
Symbol
h
FE1
h
FE2
h
FE3
V
CEsat1
Test Conditions
I
C
= 50 mA, V
CE
= 5 Volts
I
C
= 360 mA, V
CE
= 5 Volts
I
C
= 50 mA, V
CE
= 5 Volts
T
A
= -55°C
I
C
= 100 mA, I
B
= 10 mA
Pulse Test: Pulse Width = 300
µs,
Duty Cycle
≤
2.0%
Min
25
8
12
Typ
Max
200
Units
1
Volts
Min
4
Typ
Max
7.5
3.5
Units
pF
%
V
CC
= 28 Volts, f = 400 MHz
P
in
= 0.15 W
P
in
= 0.075 W
V
CC
= 28 Volts, f = 400 MHz
P
in
= 0.15 W
P
in
= 0.075 W
45
40
1.0
0.5
2
Watts
Copyright 20
10
Rev. F
S
EMICOA Corporation
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
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