28C256TRT2DB-12 datasheet, PDF

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28C256TRT2DB-12: DescriptionEEPROM, 32KX8, 120ns, Parallel, CMOS, DIP-28; Categorystorage storage; File Size264KB，14 Pages; ManufacturerMaxwell Technologies Inc.

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28C256TRT2DB-12 Overview

EEPROM, 32KX8, 120ns, Parallel, CMOS, DIP-28

28C256TRT2DB-12 Parametric

Parameter Name	Attribute value
Maker	Maxwell Technologies Inc.
Parts packaging code	DIP
package instruction	DIP,
Contacts	28
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Maximum access time	120 ns
JESD-30 code	R-XDIP-T28
length	35.56 mm
memory density	262144 bit
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	28
word count	32768 words
character code	32000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	32KX8
Package body material	UNSPECIFIED
encapsulated code	DIP
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Programming voltage	5 V
Certification status	Not Qualified
Maximum seat height	5.715 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
total dose	25k Rad(Si) V
width	15.24 mm
Maximum write cycle time (tWC)	10 ms
Base Number Matches	1

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256K EEPROM (32K x 8-Bit)

EEPROM

GND

DATA INPUTS/OUTPUT

I/O0 - I/O7

28C256T

Y DECODER

ADDRESS

INPUTS

OE, CE, and WE

LOGIC

DATA LATCH

INPUT/OUTPUT

BUFFERS

Y-GATING

CELL MATRIX

X DECODER

IDENTIFICATION

Logic Diagram

Memory

EATURES

• R

-P

® radiation-hardened against natural space radia-

tion

• Total dose hardness:

- > 100 Krad (Si), dependent upon space mission

• Excellent Single Event Effects:

- SEL

LET: > 120 MeV/mg/cm

- SEU

LET (read mode): > 90 MeV/mg/cm

- SEU

LET (write mode): > 18 MeV/mg/cm

• Package:

- 28 pin R

-P

® flat pack

- 28 pin R

-P

® DIP

- JEDEC approved byte wide pinout

• High Speed:

- 120, 150 ns maximum access times available

• High endurance:

- 10,000 erase/write (in Page Mode), 10-year data

retention

• Page Write Mode:

- 1 to 64 bytes

• Low power dissipation:

- 15 mA active current (cycle = 1 µs)

- 20 µA standby current (CE = V

)

ESCRIPTION

Maxwell Technologies’ 28C256T high density 256k-bit

EEPROM microcircuit features a greater than 100 krad (Si)

total dose tolerance, depending upon space mission. The

28C256T is capable of in-system electrical byte and page pro-

grammability. It has a 64-Byte page programming function to

make its erase and write operations faster. It also features

data polling to indicate the completion of erase and program-

ming operations.

Maxwell Technologies' patented R

-P

® packaging technol-

ogy incorporates radiation shielding in the microcircuit pack-

age. It eliminates the need for box shielding while providing

the required radiation shielding for a lifetime in orbit or space

mission. In a GEO orbit, R

-P

provides greater than 100

krad (Si) radiation dose tolerance. This product is available

with screening up to Class S.

1000584

12.19.01 Rev 5

All data sheets are subject to change without notice

(858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com

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