This m aterial and the inform ation herein is the p roperty of Fuji Electric
Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purp os es w ithout the express w ritten cons ent of
Fuji Electric Device Technolog y C o. ,Ltd.
DATE
CHECKED
Oct.-27-'05
Power MOSFET
SPECIFICATION
Octorber-27-2005
MS5F06392
DWG.NO.
CHECKED
Oct.-27-'05
DRAWN
Oct.-27-'05
NAME
Date
Device Name
Type Name
Spec. No.
APPROVED
:
:
:
:
FMA18N25G
MS5F06392
1 / 19
Fuji Electric Device Technology Co.,Ltd.
H04-004-05
This m aterial and the inform ation herein is the p roperty of Fuji Electric
Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purp os es w ithout the express w ritten cons ent of
Fuji Electric Device Technolog y C o. ,Ltd.
2005
enactment
Date
Oct-27
Classification
Index
Revised Records
DWG.NO.
Fuji Electric Device Technology Co.,Ltd.
Content
MS5F06392
2 / 19
Drawn Checked Checked Approved
H04-004-03
1.Scope
2.Construction
3.Applications
4.Outview
This specifies Fuji Power MOSFET FMA18N25G
N-Channel enhancement mode power MOSFET
for Switching
TO-220F
Outview See to 8/18 page
5.Absolute Maximum Ratings at Tc=25
(unless otherwise specified)
C
Description
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Non-repetitive
Maximum Avalanche Current
Repetitive
Maximum Avalanche Current
Non-Repetitive
Maximum Avalanche Energy
Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Maximum Power Dissipation
Operating and Storage
Temperature range
Isolation Voltage
Symbol
V
DS
V
DSX
I
D
I
DP
V
GS
I
AS
I
AR
E
AS
E
AR
dV
DS
/dt
dV/dt
P
D
T
ch
T
stg
V
ISO
Characteristics
250
250
18.0
± 72.0
± 30
18.0
18.0
349.5
4.8
20
5
48
W
2.16
150
-55 to +150
2
C
C
kVrms
t=60sec
f=60Hz
Unit
V
V
A
A
V
A
Note *1
A
mJ
mJ
kV/
s
kV/
s
Note *2
Note *3
VDS
250V
Note *4
Tc=25°C
Ta=25°C
VGS=-30V
Remarks
This m aterial and the inform ation herein is the p roperty of Fuji Electric
Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purp os es w ithout the express w ritten cons ent of
Fuji Electric Device Technolog y C o. ,Ltd.
6.Electrical Characteristics at Tc=25
(unless otherwise specified)
C
Static Ratings
Description
Drain-Source
Breakdown Voltage BV
DSS
Gate Threshold
Voltage V
GS
(th)
Zero Gate Voltage
Drain Current I
DSS
Gate-Source
Leakage Current I
GSS
Drain-Source
On-State Resistance R
DS
(on)
Symbol
Conditions
I
D
=250
A
V
GS
=0V
I
D
=250
A
V
DS
=V
GS
V
DS
=250V
T
ch
=25°C
V
GS
=0V
V
DS
=200V
T
ch
=125°C
V
GS
=0V
V
GS
= ± 30V
V
DS
=0V
I
D
=9.0A
V
GS
=10V
DWG.NO.
min.
typ.
max.
Unit
250
3.0
-
-
-
-
-
-
-
5.0
25
V
V
A
250
-
-
100
nA
-
0.15
0.19
Fuji Electric Device Technology Co.,Ltd.
MS5F06392
3 / 19
H04-004-03
Dynamic Ratings
Description
Forward
Transconductance g
fs
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance Crss
td(on)
Turn-On Time
tr
td(off)
Turn-Off Time
Total Gate Charge
This m aterial and the inform ation herein is the p roperty of Fuji Electric
Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purp os es w ithout the express w ritten cons ent of
Fuji Electric Device Technolog y C o. ,Ltd.
Symbol
Conditions
I
D
=9.0A
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
min.
typ.
max.
Unit
4.0
-
-
8.0
1000
185
6.0
-
1500
280
9.0
S
Ciss
Coss
pF
-
V
cc
=150V
V
GS
=10V
I
D
=9.0A
R
GS
=10
V
cc
=125V
I
D
=18A
V
GS
=10V
-
-
-
-
-
-
-
15
5.0
30
3.5
26
11
6.0
23
7.5
45
5.3
39
17
9.0
nC
ns
tf
Q
G
Q
GS
Q
GD
Gate-Source Charge
Gate-Drain Charge
Reverse Diode
Description
Diode Forward
Symbol
Conditions
I
F
=18.0A
V
GS
=0V
I
F
=18.0A
V
GS
=0V
-di/dt=100A/
s
T
ch
=25°C
Tch=25°C
min.
typ.
max.
Unit
On-Voltage V
SD
Reverse Recovery
Time trr
Reverse Recovery
Charge Qrr
7.Thermal Resistance
Description
Channel to Case
Channel to Ambient
Rth(ch-a)
Rth(ch-c)
-
1.20
1.50
V
-
0.2
-
μs
-
1.8
-
μC
Symbol
min.
typ.
max.
58.0
2.60
Unit
C/W
C/W
Note *1 : Tch
150 See Fig.1 and Fig.2
C,
Note *2 : Starting Tch=25
℃
,I
AS
=8.0A,L=10.0mH,Vcc=25V,R
G
=50
Ω
,See Fig.1 and Fig.2
E
AS
limited by maximum channel temperature and avalanche current.
See to the 'Maximum Avalanche Energy' graph of page 18/19.
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Maximum Transient Thermal impedance' graph of page 19/19.
Note *4 : I
F
D
,-di/dt=50A/
-I
s,Vcc
DSS
,Tch
BV
150 C
Fuji Electric Device Technology Co.,Ltd.
MS5F06392
4 / 19
H04-004-03
DWG.NO.
This m aterial and the inform ation herein is the p roperty of Fuji Electric
Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent,
or disclosed in any way whatsoever for the use of any third party nor used
for the manufacturing purp os es w ithout the express w ritten cons ent of
Fuji Electric Device Technolog y C o. ,Ltd.
Fig.1 Test circuit
Fig.2 Operating waveforms
-15V
0
50Ω
+10V
D.U.T
DWG.NO.
Fuji Electric Device Technology Co.,Ltd.
IDP
L
Vcc
BV
DSS
V
GS
MS5F06392
5 / 19
I
D
V
DS
H04-004-03
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