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FQD3N60TM

Description
Power Field-Effect Transistor, 2.4A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
CategoryDiscrete semiconductor    The transistor   
File Size573KB,9 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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FQD3N60TM Overview

Power Field-Effect Transistor, 2.4A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

FQD3N60TM Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeTO-252
package instructionDPAK-3
Contacts3
Reach Compliance Codenot_compliant
Avalanche Energy Efficiency Rating (Eas)200 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)2.4 A
Maximum drain current (ID)2.4 A
Maximum drain-source on-resistance3.6 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-252
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)50 W
Maximum pulsed drain current (IDM)9.6 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
FQD3N60 / FQU3N60
April 2000
QFET
FQD3N60 / FQU3N60
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
TM
Features
2.4A, 600V, R
DS(on)
= 3.6Ω @V
GS
= 10 V
Low gate charge ( typical 10 nC)
Low Crss ( typical 5.5 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
D
!
"
G
!
G
S
! "
"
"
D-PAK
FQD Series
I-PAK
G D S
FQU Series
!
S
Absolute Maximum Ratings

Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
FQD3N60 / FQU3N60
600
2.4
1.5
9.6
±30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
200
2.4
5.0
4.5
2.5
50
0.4
-55 to +150
300
T
J
, T
STG
T
L
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8from case for 5 seconds
Thermal Characteristics
Symbol
R
θJC
R
θJA
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
Typ
--
--
--
Max
2.5
50
110
Units
°CW
°CW
°CW
* When mounted on the minimum pad size recommended (PCB Mount)
©2000 Fairchild Semiconductor International
Rev. A, April 2000
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