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HYM324020GD-50

Description
Fast Page DRAM Module, 4MX32, 50ns, CMOS
Categorystorage    storage   
File Size77KB,10 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

HYM324020GD-50 Overview

Fast Page DRAM Module, 4MX32, 50ns, CMOS

HYM324020GD-50 Parametric

Parameter NameAttribute value
MakerSIEMENS
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE
Maximum access time50 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
Spare memory width16
JESD-30 codeR-XZMA-N72
memory density134217728 bit
Memory IC TypeFAST PAGE DRAM MODULE
memory width32
Number of functions1
Number of ports1
Number of terminals72
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize4MX32
Output characteristics3-STATE
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Certification statusNot Qualified
refresh cycle4096
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal locationZIG-ZAG
Base Number Matches1
4M
×
32 -Bit Dynamic RAM Module
SMALL OUTLINE MEMORY MODULE
HYM 324020GD(L)-50/-60
Preliminary Information
72-Pin Small Outline Dual-in-Line Memory Module
4 0194 034 words by 32-bit organization
Performance:
t
RC
t
RAC
t
CAC
t
AA
t
PC
Read / Write Cycle Time
RAS Access Time
CAS Access Time
Access Time From Address
Fast Page Mode Cycle Time
-50
90
50
13
25
35
-60
110
60
15
30
40
ns
ns
ns
ns
ns
Single + 3.3 V (± 0.3 V) supply
Low power dissipation
max. 2880 mW active (-50 version)
max. 2592 mW active (-60 version)
LVTLL - 57.6 mw standby
LVCMOS– 28.8 mW standby
LVCMOS– 5.76 mW standby (L-version)
Fast Page Mode
Low Power Versions with Self Refresh
CAS-before-RAS refresh, RAS-only-refresh
8 decoupling capacitors mounted on substrate
All inputs, outputs and clock fully TTL compatible
Utilizes eight 4M
×
4 -DRAMs in TSOPII-packages
Card size 56.69mm x 25.40mm x 3.80 mm
12 / 10 Adressing (Row/Column)
4096 refresh cycles / 64 ms
Gold contact pad
Semiconductor Group
1
2.96

HYM324020GD-50 Related Products

HYM324020GD-50 HYM324020GD-60 HYM324020GDL-60
Description Fast Page DRAM Module, 4MX32, 50ns, CMOS Fast Page DRAM Module, 4MX32, 60ns, CMOS Fast Page DRAM Module, 4MX32, 60ns, CMOS, DIMM-72
Maker SIEMENS SIEMENS SIEMENS
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
access mode FAST PAGE FAST PAGE FAST PAGE
Maximum access time 50 ns 60 ns 60 ns
Other features RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
Spare memory width 16 16 16
JESD-30 code R-XZMA-N72 R-XZMA-N72 R-XZMA-N72
memory density 134217728 bit 134217728 bit 134217728 bit
Memory IC Type FAST PAGE DRAM MODULE FAST PAGE DRAM MODULE FAST PAGE DRAM MODULE
memory width 32 32 32
Number of functions 1 1 1
Number of ports 1 1 1
Number of terminals 72 72 72
word count 4194304 words 4194304 words 4194304 words
character code 4000000 4000000 4000000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C
organize 4MX32 4MX32 4MX32
Output characteristics 3-STATE 3-STATE 3-STATE
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Certification status Not Qualified Not Qualified Not Qualified
refresh cycle 4096 4096 4096
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V
surface mount NO NO NO
technology CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form NO LEAD NO LEAD NO LEAD
Terminal location ZIG-ZAG ZIG-ZAG ZIG-ZAG
Base Number Matches 1 1 1
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