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ZXTP2012ZQTA

Description
Power Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size943KB,7 Pages
ManufacturerDiodes Incorporated
Environmental Compliance  
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ZXTP2012ZQTA Overview

Power Bipolar Transistor

ZXTP2012ZQTA Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Objectid1249823204
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time8 weeks
Samacsys DescriptionBipolar Transistors - BJT Pwr Low Sat Transistor SOT89 T&R 1K
Samacsys ManufacturerDiodes Incorporated
Samacsys Modified On2024-05-02 08:52:54
YTEOL4
Other featuresHIGH RELIABILITY
Shell connectionCOLLECTOR
Maximum collector current (IC)4.3 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JESD-30 codeR-PSSO-F3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
GuidelineAEC-Q101
surface mountYES
Terminal surfaceMATTE TIN
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)120 MHz
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