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PACDN017Q

Description
UNIDIRECTIONAL, SILICON, TVS DIODE
Categorysemiconductor    Discrete semiconductor   
File Size110KB,3 Pages
ManufacturerCALMIRCO
Websitehttp://www.calmicro.com/
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PACDN017Q Overview

UNIDIRECTIONAL, SILICON, TVS DIODE

CALIFORNIA MICRO DEVICES
PAC DN017
Applications
• Parallel printer port protection
• ESD protection for sensitive
electronic equipment.
18 CHANNEL ESD PROTECTION ARRAY WITH ZENER SUPPLY CLAMP
Features
• 18-channel ESD protection
• Integral Zener diode clamp to suppress
supply rail transients
• 15KV ESD protection (HBM)
• 15KV contact discharge ESD protection
per IEC 61000-4-2
• Low loading capacitance, 7 pF typ.
• 24-pin QSOP package
Product Description
The PAC DN017™ is a diode array designed to provide 18 channels of ESD protection for electronic components or
sub-systems. Each channel consists of a pair of diodes which steers the ESD current pulse either to the positive (V
P
) or
negative (V
N
) supply. In addition, there is an integral Zener diode between
V
P
and
V
N
to supress any voltage
disturbance due to these ESD pulses. The PAC DN017 will protect against ESD pulses up to 15 KV Human Body
Model, and 15KV contact discharge per International Standard IEC 61000-4-2.
This device is particularly well-suited to provide additional ESD protection for parallel printer ports. It exhibits low
loading capacitance for all signal lines.
ABSOLUTE MAXIMUM RATINGS
SCHEMATIC CONFIGURATION
Diode Forward DC Current
(Note 1)
40mA
°
Storage Temperature
-65 C to 150
°
C
Operating Temperature Range
-20°C to 85°C
DC Voltage at any Channel Input V
N
-0.5V to V
P
+0.5V
Note 1: Only one diode conducting at a time.
STANDARD SPECIFICATIONS
Parameter
Min.
Operating Supply Voltage ( V
P
- V
N
)
Supply Current @ V
P
-V
N
= 5.5V
0.65 V
D iode Forward Voltage, I
F
= 20mA, T = 25°C
Zener clamp reverse breakdown voltage @1mA, T = 25°C
ESD Protection
Peak D ischarge Voltage at any Channel Input, in-system
(Note 2)
000
Human Body Model, Method 3015
(Note 3, 4)
±15 KV
±15 KV
000
Contact D ischarge per IEC 61000-4-2
(Note 5)
Channel Clamp Voltage @ 15KV ESD HBM, T = 25°C
000
Positive transients
000
Negative transients
Channel Leakage Current, T = 25°C
Channel Input Capacitance (Measured @ 1 MHz)
V
P
= 5V, V
N
= 0V, V
IN
= 2 .5 V
(Note 4)
Package Power Rating
Note 2:
Note 3:
Note 4:
Note 5:
Typ.
6.6V
Max.
5.5 V
20µ A
0.95 V
(Notes 3, 4)
±0.1 µA
7pF
V
P
+ 13.0 V
V
N
- 13.0 V
±1.0 µA
1 2 pF
1.0W
From I/O pins to V
P
or V
N
only. Bypass opacitor between V
P
and V
N
is not required. However, a 0.2
µF
ceramic chip capacitor
bypassing V
P
to V
N
is recommended if the lowest possible channel clamp voltage is desired.
Human Body Model per MIL-STD-883, Method 3015, C
Discharge
=100pF, R
Discharge
=1.5K
, V
P
=5.0V, V
N
=GND.
This parameter is guaranteed by characterization.
Standard IEC 61000-4-2 with C
Discharge
=150pF, and R
Discharge
=330
, V
P
=5V, V
N
=GND.
C0631199
©1999 California Micro Devices Corp. All rights reserved. P/Active
®
is a registered trademark and PAC is a trademark of California Micro Devices.
11/98
215 Topaz Street, Milpitas, California 95035
Tel: (408) 263-3214
Fax: (408) 263-7846
www.calmicro.com
1

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