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3.0SMCJ18-G

Description
Trans Voltage Suppressor Diode, 3000W, 18V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, LEAD FREE, PLASTIC, SMC, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size266KB,5 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Environmental Compliance
Download Datasheet Parametric View All

3.0SMCJ18-G Overview

Trans Voltage Suppressor Diode, 3000W, 18V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, LEAD FREE, PLASTIC, SMC, 2 PIN

3.0SMCJ18-G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSangdest Microelectronics (Nanjing) Co., Ltd.
package instructionR-PDSO-C2
Reach Compliance Codeunknown
Other featuresUL RECOGNIZED
Maximum breakdown voltage25.3 V
Minimum breakdown voltage20 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AB
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak reverse power dissipation3000 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Certification statusNot Qualified
Maximum repetitive peak reverse voltage18 V
surface mountYES
technologyAVALANCHE
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1


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Dim
A
B
C
D
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F
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Min
Max
5.59
6.22
6.60
7.11
2.75
3.25
0.152 0.305
7.75
8.13
2.00
2.62
0.051 0.203
0.76
1.27
In mm
Min
Max







0.220 0.245
0.260 0.280
0.108 0.128
0.006 0.012
0.305 0.320
0.079 0.103
0.002 0.008
0.030 0.05
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