K4D263238E-VC22 datasheet, PDF

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K4D263238E-VC22: DescriptionDDR DRAM, 4MX32, 0.55ns, CMOS, PBGA144, LEAD FREE, FBGA-144; Categorystorage storage; File Size320KB，18 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K4D263238E-VC22 Overview

DDR DRAM, 4MX32, 0.55ns, CMOS, PBGA144, LEAD FREE, FBGA-144

K4D263238E-VC22 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Objectid	1125504843
package instruction	LFBGA, BGA144,12X12,32
Reach Compliance Code	compliant
ECCN code	EAR99
YTEOL	0
access mode	FOUR BANK PAGE BURST
Maximum access time	0.55 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	450 MHz
I/O type	COMMON
interleaved burst length	2,4,8
JESD-30 code	S-PBGA-B144
length	12 mm
memory density	134217728 bit
Memory IC Type	GDDR1 DRAM
memory width	32
Humidity sensitivity level	3
Number of functions	1
Number of ports	1
Number of terminals	144
word count	4194304 words
character code	4000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	65 °C
Minimum operating temperature
organize	4MX32
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	LFBGA
Encapsulate equivalent code	BGA144,12X12,32
Package shape	SQUARE
Package form	GRID ARRAY, LOW PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
refresh cycle	4096
Maximum seat height	1.4 mm
self refresh	YES
Continuous burst length	2,4,8,FP
Maximum standby current	0.12 A
Maximum slew rate	1.29 mA
Maximum supply voltage (Vsup)	2.94 V
Minimum supply voltage (Vsup)	2.66 V
Nominal supply voltage (Vsup)	2.8 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
width	12 mm

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