BAR43/A/C/S
BAR43/A/C/S
Connection Diagrams
3
3
BAR43
3
3 BAR43A
D95
2
1
1
2
1
BAR43C 3
2NC
1
2
3 BAR43S
MARKING
BAR43 D95 BAR43A DB1
BAR43C DB2 BAR43S DA5
SOT-23
1
2
1
2
Schottky Diodes
Absolute Maximum Ratings*
Symbol
V
RRM
I
F(AV)
I
FSM
T
stg
T
J
T
A
= 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Pulse Width = 1.0 second
Storage Temperature Range
Operating Junction Temperature
Value
30
200
750
-55 to +150
150
Units
V
mA
mA
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**
Mounted on ceramic substrate 10mm x 8mm x 0.6mm.
Thermal Characteristics
Symbol
P
D
R
θJA
Power Dissipation
Thermal Resistance, Junction to Ambient
Parameter
Value
290
430
Units
mW
°C/W
Electrical Characteristics
Symbol
V
R
V
F
I
R
t
rr
T
A
= 25°C unless otherwise noted
Parameter
Breakdown Voltage
Test Conditions
Min
30
260
Max
330
450
1.0
0.5
100
5.0
80%
Units
V
mV
mV
V
µA
µA
ns
I
R
= 100
µA
Forward Voltage
I
F
= 2.0 mA
I
F
= 15 mA
I
F
= 100 mA
Reverse Current
V
R
= 25 V
V
R
= 25 V, T
A
= 100°C
Reverse Recovery Time
I
F
= I
R
= 10 mA, I
RR
= 1.0 mA,
R
L
= 100
Ω
Minimum Detection Recovery Time I
F
= I
R
= 10 mA, I
RR
= 1.0 mA,
R
L
= 100
Ω
2001
Fairchild Semiconductor Corporation
BAR43, Rev. B
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Definition of Terms
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Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
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Rev. H4
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