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P930

Description
CdS photoconductive cell
CategoryLED optoelectronic/LED    photoelectric   
File Size137KB,2 Pages
ManufacturerHamamatsu
Websitehttp://www.hamamatsu.com
Download Datasheet Parametric View All

P930 Overview

CdS photoconductive cell

P930 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknow
ConfigurationSINGLE
Number of functions1
Maximum operating temperature70 °C
Minimum operating temperature-30 °C
Optoelectronic device typesOPTOELECTRONIC DEVICE
Base Number Matches1
VISIBLE DETECTOR
CdS photoconductive cell
Metal package type
Hermetically sealed for high reliability
CdS photoconductive cells utilize photoconductive effects in semiconductors that decrease their resistance when illuminated by light. These
sensors are non-polar resistive elements with spectral response characteristics close to the human eye (luminous efficiency), thus making their
operating circuits simple and small.
Features
Applications
l
Variety of package size
l
Highly resistant to moisture and dust
l
Sensor for office machine
l
Safety device for heating system and boiler
(flame monitor for oil burner)
l
Night/day check sensor and sunlight sensor for air conditioner
l
Alarm and safety sensor
I
Absolute maximum ratings / Characteristics (Typ. Ta=25 °C, unless otherwise noted)
Peak
Power Ambient
sensitivity
Supply
Dimensional
dissipation
temperature
wavelength
10
lx,
2856 K
voltage
outline
P
Ta
lp
Min.
Max.
(Vdc)
(mW)
(°C)
(nm)
(kW)
(kW)
100
150
30
50
100
200
100
150
400
50
100
-30 to +50
-30 to +70
-30 to +50
-30 to +60
-30 to +50
-30 to +60
-30 to +80
-30 to +60
630
570
560
560
520
620
520
560
570
540
13
15
7
21
20
14
4.4
8
1.3
1.3
5
39
45
23
63
60
43
13
24
3.7
3.7
15
Absolute maximum ratings
Characteristics *

Resistance *
0
lx
*
!
Min.
(MW)
1
10
0.5
20
10
20
5
0.05
0.3
1.0
g

*
"


Response time 10
lx
*
#
Rise time Fall time
tr
tf
(ms)
60
40
60
25
30
35
50
70
80
40
(ms)
25
20
90
20
10
20
20
100
40
30
Type No.
5M type (TO-18)
P1114-01
P1114-04
6M type (f5.5)
P930
8M type (TO-5)
P201B
P201D
P368
P380
P467
P534
12M type (TO-8)
P621
P3872
100 to 10
l
x
0.80
0.68
0.85
0.90
0.85
0.90
0.55
0.75
0.80
300
*1: All characteristics are measured after exposure to light (100 to 500

lx)
for one to two hours.
*2: The light source is a standard tungsten lamp operated at a color temperature of 2856 K.
*3: Measured 10 seconds after removal of light of 10

lx.
*4: Typical gamma characteristics (within

±0.10 variations) between 100lx to 10lx
γ
100
=
10
log (R
100
) - log (R
10
)
log (E
100
) - log (E
10
)
E

, E

: illuminance 100lx, 10lx
x
R

, R

: resistance at 100lx and 10l respectively
*5: The rise time is the time required for the sensor resistance to reach 63 % of the saturated conductance level (resistance
when fully illuminated). The fall time is the time required for the sensor resistance to decay from the saturated conductance
level to 37 %.
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