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BD955F

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size106KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric Compare View All

BD955F Overview

Transistor

BD955F Parametric

Parameter NameAttribute value
MakerInchange Semiconductor
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BD949F/951F/953F/955F
DESCRIPTION
·DC
Current Gain-
: h
FE
= 40(Min)@ I
C
= 500mA
·Complement
to Type BD950F/952F/954F/956F
APPLICATIONS
·Designed
for power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BD949F
BD951F
V
CBO
Collector-Base Voltage
BD953F
BD955F
BD949F
BD951F
V
CEO
Collector-Emitter Voltage
BD953F
BD955F
V
EBO
I
C
I
CM
P
C
T
J
T
stg
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
100
120
5
5
8
22
150
-65~150
V
A
A
W
100
120
60
80
V
VALUE
60
80
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
8.12
UNIT
℃/W
isc Website:www.iscsemi.cn

BD955F Related Products

BD955F BD951F
Description Transistor Transistor
Reach Compliance Code unknown unknown
Base Number Matches 1 1

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Index Files: 654  793  949  281  2655  14  16  20  6  54 
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