SuperSOT
SOT23 PNP SILICON POWER
(SWITCHING) TRANSISTORS
ISSUE 3 JUNE 1996
FEATURES
FMMT717 FMMT718
FMMT720 FMMT722
FMMT723
*
*
*
*
*
*
625mW POWER DISSIPATION
C
B
E
I
C
CONT 2.5A
I
C
Up To 10A Peak Pulse Current
Excellent h
fe
Characteristics Up To 10A (pulsed)
Extremely Low Saturation Voltage E.g. 10mV Typ.
Exhibits extremely low equivalent on-resistance;
R
CE(sat)
DEVICE TYPE
FMMT717
FMMT718
FMMT720
FMMT722
FMMT723
COMPLEMENT
FMMT617
FMMT618
FMMT619
FMMT624
PARTMARKING
717
718
720
722
723
R
CE(sat)
72m
Ω
at 2.5A
97m
Ω
at 1.5A
163m
Ω
at 1.5A
-
-
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current**
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C*
Operating and Storage
Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
FMMT
717
-12
-12
-5
-10
-2.5
FMMT
718
-20
-20
-5
-6
-1.5
FMMT
720
-40
-40
-5
-4
-1.5
-500
625
-55 to +150
FMMT
722
-70
-70
-5
-3
-1.5
FMMT
723
-100
-100
-5
-2.5
-1
UNIT
V
V
V
A
A
mA
mW
°C
*Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm
**Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for these devices
3 - 159
FMMT722
FMMT723
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
FMMT722
MIN.
-70
-70
TYP.
-150
-125
-100
-100
-5
-100
-100
-100
-35
-135
-140
-175
-50
-200
-220
-260
-1.05
-1.0
300
300
250
FMMT723
TYP.
-200
-160
-8.8
MAX.
MAX. MIN.
UNIT CONDITIONS.
V
V
V
nA
nA
nA
nA
nA
mV
mV
mV
mV
mV
mV
V
V
I
C
=-100µA
I
C
=-10mA*
I
E
=-100µA
V
C B
=-60V
V
C B
=-80V
V
EB
=-4V
V
C ES
=-60V
V
C ES
=-80V
I
C
=-0.1A, I
B
=-10mA*
I
C
=-0.5A, I
B
=-20mA*
I
C
=-0.5A, I
B
=-50mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-1A, I
B
=-150mA*
I
C
=-1.5A, I
B
=-200mA*
I
C
=-1A, I
B
=-150mA*
I
C
=-1.5A, I
B
=-200mA*
I
C
=-1A, V
C E
=-10V*
I
C
=-1.5A, V
C E
=-5V*
I
C
=-10mA, V
C E
=-5V*
I
C
=-10mA, V
C E
=-10V*
I
C
=-0.1A, V
C E
=-5V*
I
C
=-0.1A, V
C E
=-10V*
I
C
=-0.5A, V
C E
=-10V*
I
C
=-1A, V
C E
=-5V*
I
C
=-1A, V
C E
=-10V*
I
C
=-1.5A, V
C E
=-5V*
I
C
=-1.5A, V
C E
=-10V*
I
C
=-3A, V
C E
=-5V*
MHz
I
C
=-50mA, V
C E
=-10V
f=100MHz
V
C B
=-10V, f=1MHz
V
C C
=-50V, I
C
=-0.5A
I
B1
=I
B2
=-50mA
Collector-Base
V
(BR) CBO
Breakdown Voltage
Collector-Emitter
V
(BR) CEO
Breakdown Voltage
Emitter-Base
V
(BR)EBO
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
I
C BO
I
EBO
I
C ES
V
C E( sat)
-5
-8.8
-100
-100
-100
-50
-125
-210
-0.89
-0.71
-80
-200
-330
-1.0
-1.0
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
V
BE( sat)
V
BE(on)
h
FE
300
300
175
40
-0.94
-0.78
470
450
275
60
10
475
450
375
250
30
Transition
Frequency
f
T
150
200
150
20
200
13
50
760
20
Output Capacitance C
ob o
Turn-On Time
Turn-Off Time
t
(on)
t
(off)
14
40
700
pF
ns
ns
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
3 - 165
FMMT617 FMMT624
FMMT618 FMMT625
FMMT619
SuperSOT Series
FMMT717 FMMT722
FMMT718 FMMT723
FMMT720
THERMAL CHARACTERISTICS AND DERATING INFORMATION
DERATING CURVE
MAXIMUM TRANSIENT THERMAL RESISTANCE
* Reference above figures, Devices were mounted on a 15mmx15mm ceramic substrate
3 - 158
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