BC638, BC640, BC640−16
High Current Transistors
PNP Silicon
Features
•
Pb−Free Packages are Available*
http://onsemi.com
COLLECTOR
2
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
BC638
BC640
Collector-Base Voltage
BC638
BC640
Emitter-Base Voltage
Collector Current − Continuous
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
V
EBO
I
C
P
D
625
5.0
P
D
1.5
12
T
J
, T
stg
−55 to +150
W
mW/°C
°C
mW
mW/°C
1
2
3
V
CBO
−60
−80
−5.0
−0.5
Vdc
Adc
TO−92
CASE 29
STYLE 14
Symbol
V
CEO
−60
−80
Vdc
Value
Unit
Vdc
3
BASE
1
EMITTER
MARKING DIAGRAMS
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Ambient
Thermal Resistance,
Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
BC
6x
AYWW
G
G
BC64
0−16
AYWW
G
G
BC6x
= Device Code
x = 3 or 4
BC640−16 = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2005
1
September, 2005 − Rev. 2
Publication Order Number:
BC638/D
BC638, BC640, BC640−16
ORDERING INFORMATION
Device
BC638
BC638G
BC638ZL1
BC638ZL1G
BC640
BC640G
BC640ZL1
BC640ZL1G
BC640−16
BC640−16G
Package
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
Shipping
5000 Units / Box
5000 Units / Box
2000 Units / Ammo Box
2000 Units / Ammo Box
5000 Units / Box
5000 Units / Box
2000 Units / Ammo Box
2000 Units / Ammo Box
5000 Units / Box
5000 Units / Box
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage
(I
C
= −10 mAdc, I
B
= 0)
Collector − Base Breakdown Voltage
(I
C
= −100
mAdc,
I
E
= 0)
Emitter − Base Breakdown Voltage
(I
E
= −10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= −30 Vdc, I
E
= 0)
(V
CB
= −30 Vdc, I
E
= 0, T
A
= 125°C)
ON CHARACTERISTICS
(Note 1)
DC Current Gain
(I
C
= −5.0 mAdc, V
CE
= −2.0 Vdc)
(I
C
= −150 mAdc, V
CE
= −2.0 Vdc)
h
FE
BC638
BC640
BC640−16
V
CE(sat)
V
BE(on)
25
40
40
100
25
−
−
−
−
−
−
−
−
−0.25
−0.5
−
−
160
160
250
−
−0.5
−
−1.0
Vdc
Vdc
−
V
(BR)CEO
BC638
BC640
V
(BR)CBO
BC638
BC640
V
(BR)EBO
I
CBO
−
−
−
−
−100
−10
nAdc
mAdc
−60
−80
−5.0
−
−
−
−
−
−
Vdc
−60
−80
−
−
−
−
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
(I
C
= −500 mA, V
CE
= −2.0 V)
Collector − Emitter Saturation Voltage
(I
C
= −500 mAdc, I
B
= −50 mAdc)
Base − Emitter On Voltage
(I
C
= −500 mAdc, V
CE
= −2.0 Vdc)
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product
(I
C
= −50 mAdc, V
CE
= −2.0 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= −10 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= −0.5 Vdc, I
C
= 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle 2.0%.
f
T
C
ob
C
ib
−
−
−
150
9.0
110
−
−
−
MHz
pF
pF
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2
BC638, BC640, BC640−16
−1000
−500
IC, COLLECTOR CURRENT (mA)
−200
−100
−50
−20
−10
−5
−2
−1
−1
P
D
T
A
25°C
P
D
T
C
25°C
BC636
BC638
BC640
P
D
T
A
25°C
P
D
T
C
25°C
SOA = 1S
hFE, DC CURRENT GAIN
200
−A
100
−L
500
V
CE
= −2 V
−B
50
−2 −3 −4 −5 −7 −10
−20 −30−40 −50 −70 −100
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
20
−1
−3
−5
−10
−30 −50 −100
I
C
, COLLECTOR CURRENT (mA)
−300 −500 −1000
Figure 1. Active Region Safe Operating Area
BANDWIDTH PRODUCT (MHz)
Figure 2. DC Current Gain
500
300
V, VOLTAGE (VOLTS)
−1
−0.8
−0.6
−0.4
−0.2
V
CE(sat)
@ I
C
/I
B
= 10
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= −2 V
100
V
CE
= −2 V
f T, CURRENT−GAIN
50
20
−1
−10
−100
I
C
, COLLECTOR CURRENT (mA)
−1000
0
−1
−10
−100
I
C
, COLLECTOR CURRENT (mA)
−1000
Figure 3. Current Gain Bandwidth Product
Figure 4. “Saturation” and “On” Voltages
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
−0.2
−1.0
V
CE
= −2 VOLTS
DT
= 0°C to +100°C
q
V
for V
BE
−1.6
−2.2
−1
−3
−5
−10
−30 −50 −100
I
C
, COLLECTOR CURRENT (mA)
−300 −500 −1000
Figure 5. Temperature Coefficients
http://onsemi.com
3
BC638, BC640, BC640−16
PACKAGE DIMENSIONS
TO−92
(TO−226)
CASE 29−11
ISSUE AL
A
R
P
L
SEATING
PLANE
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
K
X X
G
H
V
1
D
J
C
SECTION X−X
N
N
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
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4
BC638/D