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BC636ZL1

Description
PNP medium power transistors
CategoryDiscrete semiconductor    The transistor   
File Size54KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BC636ZL1 Overview

PNP medium power transistors

BC636ZL1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-92
package instructionCASE 29-11, TO-226, 3 PIN
Contacts3
Manufacturer packaging codeCASE 29-11
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresEUROPEAN PART NUMBER
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.8 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
BC638, BC640, BC640−16
High Current Transistors
PNP Silicon
Features
Pb−Free Packages are Available*
http://onsemi.com
COLLECTOR
2
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
BC638
BC640
Collector-Base Voltage
BC638
BC640
Emitter-Base Voltage
Collector Current − Continuous
Total Device Dissipation
@ T
A
= 25°C
Derate above 25°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
V
EBO
I
C
P
D
625
5.0
P
D
1.5
12
T
J
, T
stg
−55 to +150
W
mW/°C
°C
mW
mW/°C
1
2
3
V
CBO
−60
−80
−5.0
−0.5
Vdc
Adc
TO−92
CASE 29
STYLE 14
Symbol
V
CEO
−60
−80
Vdc
Value
Unit
Vdc
3
BASE
1
EMITTER
MARKING DIAGRAMS
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Ambient
Thermal Resistance,
Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
BC
6x
AYWW
G
G
BC64
0−16
AYWW
G
G
BC6x
= Device Code
x = 3 or 4
BC640−16 = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2005
1
September, 2005 − Rev. 2
Publication Order Number:
BC638/D

BC636ZL1 Related Products

BC636ZL1 BC640ZL1 BC636-16ZL1 BC636-16 BC636TA BC636TF BC636TFR
Description PNP medium power transistors PNP medium power transistors PNP medium power transistors PNP medium power transistors TRANS PNP 45V 1A TO-92 TRANS PNP 45V 1A TO-92 TRANS PNP 45V 1A TO-92
Maker ON Semiconductor ON Semiconductor ON Semiconductor - ON Semiconductor - -
package instruction CASE 29-11, TO-226, 3 PIN CASE 29-11, TO-226, 3 PIN CASE 29-11, TO-226, 3 PIN - CYLINDRICAL, O-PBCY-T3 - -
Manufacturer packaging code CASE 29-11 CASE 29-11 CASE 29-11 - 135AR - -
Reach Compliance Code _compli _compli _compli - compliant - -
ECCN code EAR99 EAR99 EAR99 - EAR99 - -
Maximum collector current (IC) 0.5 A 0.5 A 0.5 A - 1 A - -
Collector-emitter maximum voltage 45 V 80 V 45 V - 45 V - -
Configuration SINGLE SINGLE SINGLE - SINGLE - -
Minimum DC current gain (hFE) 40 40 100 - 25 - -
JEDEC-95 code TO-92 TO-92 TO-92 - TO-92 - -
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 - O-PBCY-T3 - -
JESD-609 code e0 e0 e0 - e3 - -
Number of components 1 1 1 - 1 - -
Number of terminals 3 3 3 - 3 - -
Maximum operating temperature 150 °C 150 °C 150 °C - 150 °C - -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY - -
Package shape ROUND ROUND ROUND - ROUND - -
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL - CYLINDRICAL - -
Polarity/channel type PNP PNP PNP - PNP - -
Maximum power dissipation(Abs) 0.8 W 0.8 W 1.5 W - 0.8 W - -
Certification status Not Qualified Not Qualified Not Qualified - Not Qualified - -
surface mount NO NO NO - NO - -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Matte Tin (Sn) - annealed - -
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE - THROUGH-HOLE - -
Terminal location BOTTOM BOTTOM BOTTOM - BOTTOM - -
Transistor component materials SILICON SILICON SILICON - SILICON - -
Nominal transition frequency (fT) 150 MHz 150 MHz 150 MHz - 100 MHz - -

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