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2N5416,112

Description
Small Signal Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-39
CategoryDiscrete semiconductor    The transistor   
File Size48KB,8 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

2N5416,112 Overview

Small Signal Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-39

2N5416,112 Parametric

Parameter NameAttribute value
MakerNXP
package instructionMETAL CAN PACKAGE-3
Reach Compliance Codeunknown
Shell connectionCOLLECTOR
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Minimum DC current gain (hFE)30
JEDEC-95 codeTO-39
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)15 MHz
Base Number Matches1
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D111
2N5415; 2N5416
PNP high-voltage transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 May 21
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