18.0-21.0/36.0-42.0 GHz GaAs MMIC
Doubler and Power Amplifier
September 2005 - Rev 01-Sep-05
20DBL0629
Features
Integrated Doubler and Power Amplifier
Excellent Saturated Output Stage
+26.0 dBm Output Power
50.0 dBc Fundamental Suppression
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Chip Device Layout
General Description
Mimix Broadband's 18.0-21.0/36.0-42.0 GHz GaAs MMIC
doubler integrates a doubler and 4-stage power amplifier.
The device provides better than +26.0 dBm output power
and has excellent fundamental rejection. This MMIC uses
Mimix Broadband’s 0.15
µm
GaAs PHEMT device model
technology, and is based upon electron beam lithography
to ensure high repeatability and uniformity. The chip has
surface passivation to protect and provide a rugged part
with backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die attach
process. This device is well suited for Millimeter-wave Point-
to-Point Radio, LMDS, SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
800 mA
+0.3 VDC
TBD
-65 to +165
O
C
-55 to MTTF Table
1
MTTF Table
1
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Input Frequency Range (fin)
Output Frequency Range (fout)
Input Return Loss (S11)
Output Return Loss (S22)
Fundamental Rejection
RF Input Power (RF Pin)
Output Power at 0.0 dBm Pin (Pout)
Drain Supply Voltage (Vd1) Doubler
Drain Supply Voltage (Vd2) Buffer Amp
Drain Supply Voltage (Vd3,4,5,6) PA
Gate Supply Voltage (Vg1) Doubler
Drain Supply Current (Id1) Doubler
Drain Supply Current (Id2) Buffer
Drain Supply Current (Id3,4,5,6) (Vg=-0.7V Typical) PA
Units
GHz
GHz
dB
dB
dBc
dBm
dBm
V
V
V
V
mA
mA
mA
Min.
18.0
36.0
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
TBD
12.0
50.0
0.0
+26.0
2.5
3.0
4.5
-1.2
<1.0
20
530
Max.
21.0
42.0
-
-
-
-
-
3.0
4.0
5.5
-
-
25
600
Page 1 of 6
Characteristic Data and Specifications are subject to change without notice.
©2005
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
Pr
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
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pr
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(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
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18.0-21.0/36.0-42.0 GHz GaAs MMIC
Doubler and Power Amplifier
September 2005 - Rev 01-Sep-05
20DBL0629
Power Amplifier Measurements
WP 398 - 042A A102: 20D B L0629 (8 samples)
VdX2=2.5 V , Vd B=3 V, Vd PA =4.5 V, P in= +2..+9 d B m
30
25
20
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
37
37.5
38
38.5
39
39.5
40
P
out
@ f
in
20DBL0629 at V
dx2
=2.5 V, V
dbuff
=3 V I
db
=30 mA, V
dPA
=4.5 V I
dPA
=520 mA
35
30
25
P
out
@ 2 f
in
Output power at f
in
and 2xf
in
(dBm)
20
15
5
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-10 -9 -8 -7 -6 -5 -4 -3 -2 -1
-55
10
Output pow er ( dBm )
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2
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0
1
2
3
4
5
6
7
8
9 10
Output frequency ( GHz)
20DBL0629 (R10 C11 ): V
dX2
=2.5V, V
dB
=3 V, V
dPA
=4.5 V @ P
in
=0..+10 dBm
35
P
in
=+10 dB m
35
Input power (dBm) at f
in
20DBL0629 (R10C11): V
dX2
=2.5V, V
dB
=3 V , V
dPA
=4.5 V @ P
in
=0..+10 dBm
37-40 GHz
Doubler drain current (mA)
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P
in
=0 dBm
37.5
38.0
38.5
39.0
39.5
40.0
30
25
Doubler drain current (mA)
30
25
20
20
15
15
10
37.0
0
4
6
8
n
10
Output frequency (G Hz)
Input power @ f
in
(G Hz)
20DB L0629 at V
dx2
=2.5 V, V
dbuff
=3 V I
db
=30 m A, V
dPA
=4.5 V I
dPA
=520 m A
28
27
26
25
20DB L0629 at V
dx2
=2.5 V , V
dbuff
=3 V I
db
=30 mA , V
dPA
=4.5 V I
dPA
=520 mA
0
-5
-10
Output powe r a t 2x f
in
(d B m)
Output powe r a t f
in
(d B m)
24
Pr
23
22
21
20
19
18
17
16
15
14
13
12
11
10
-15
-20
-25
-30
-35
-40
-45
-50
-55
062 9, RC =R 10C 12, R F freq (G Hz)=37
062 9, RC =R 10C 12, R F freq (G Hz)=38
062 9, RC =R 10C 12, R F freq (G Hz)=39
062 9, RC =R 10C 12, R F freq (G Hz)=40
-10 -9 -8 -7 -6 -5 -4 -3 -2 -1
0
1
2
3
4
5
6
7
8
9 10
-10 -9 -8 -7 -6 -5 -4 -3 -2 -1
0
1
2
3
4
5
6
7
8
9 10
Input power ( dBm) a t f
in
Input power (dB m) at f
in
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 6
Characteristic Data and Specifications are subject to change without notice.
©2005
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
18.0-21.0/36.0-42.0 GHz GaAs MMIC
Doubler and Power Amplifier
September 2005 - Rev 01-Sep-05
20DBL0629
Mechanical Drawing
0.295
(0.012)
1.700
(0.067)
0.694
(0.027)
1.095
(0.043)
1.494
(0.059)
2.096
(0.083)
2.705
(0.107)
2
3
4
5
6
7
0.605
(0.024)
1
14
0.0
0.0
13
12
11
10
uc
9
(Note: Engineering designator is 20DBL0629)
Bond Pad #1 (RF In)
Bond Pad #2 (Vg2)
Bond Pad #3 (Vd2)
Bond Pad #4 (Vd3)
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Vd3,4,5
5
6
7
11
10
9
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All DC Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008)
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 3.987 mg.
Bond Pad #5 (Vd4)
Bond Pad #6 (Vd5)
Bond Pad #7 (Vd6)
Bond Pad #8 (RF Out)
Bond Pad #9 (Vg6)
Bond Pad #10 (Vg5)
Bond Pad #11 Vg4)
Bond Pad #12 (Vg3)
Bond Pad #13 (Vd1)
Bond Pad #14 (Vg1)
od
Vd6
RF Out
Vg6
0.295
(0.012)
0.695
(0.027)
1.095
(0.043)
1.495
(0.059)
2.096
(0.083)
2.503
(0.099)
Bias Arrangement
Vd2
Vg2
2
3
4
Bypass Capacitors
- See App Note [2]
1
RF In
Pr
8
14
13
12
Vg1
Vd1
Vg3,4,5
tio
8
3.000
(0.118)
0.638
(0.025)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 3 of 6
Characteristic Data and Specifications are subject to change without notice.
©2005
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
n
18.0-21.0/36.0-42.0 GHz GaAs MMIC
Doubler and Power Amplifier
September 2005 - Rev 01-Sep-05
20DBL0629
App Note [1] Biasing
-
It is recommended to separately bias each amplifier stage Vd1 through Vd6 at Vd1=2.5V, Vd2=3.0V, Vd(3,4,5,6)=4.5V with
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain pad DC bypass capacitors
(~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if gate or drains are
tied together) of DC bias pads. Vd(3,4,5,6) or Vg(3,4,5,6) have been tied together but can be left open.
For Individual Stage Bias (Recommended for saturated applications) -- Each DC pad (Vd1,2,3,4,5,6 and Vg1,2,3,4,5,6) needs to have DC bypass
capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF Tables
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
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Rth
TBD
TBD
TBD
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
TBD
TBD
MTTF Hours
uc
FITs
TBD
TBD
TBD
TBD
TBD
TBD
Pr
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
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pr
TBD
tio
App Note [2] Bias Arrangement
-
Page 4 of 6
Characteristic Data and Specifications are subject to change without notice.
©2005
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
n
Id1<1mA, Id2=20mA, Id3=40mA, Id4=70mA, Id5=150mA, Id6=270mA. Separate biasing is recommended if the amplifier is to be used at high levels
of saturation, where gate rectification will alter the effective gate control voltage. As shown in the bonding diagram, it is possible to parallel stages
Vd(3,4,5) with Id(3,4,5)=260mA while maintaining satisfactory performance. For non-critical applications it is possible to parallel stages Vd(3,4,5,6)
together and adjust the common gate voltage Vg(3,4,5,6) for total drain current Id(total)=530mA. It is also recommended to use active biasing to
keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage
available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value
resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus
drain voltage. The typical gate voltage needed to do this is -0.7V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also,
make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply.
18.0-21.0/36.0-42.0 GHz GaAs MMIC
Doubler and Power Amplifier
September 2005 - Rev 01-Sep-05
20DBL0629
Device Schematic
VG2
VD2
V D3
V D4
V D5
V D6
VD
VD
VD
VD
VD
RFin
n
VD
X2
AMP
AMP
AMP
AMP
AMP
RFout
VG
VG
VG
VG
VG
VG
VG1
V D1
VG3
V G4
VG5
V G6
Pr
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
e-
pr
Page 5 of 6
Characteristic Data and Specifications are subject to change without notice.
©2005
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
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