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BCW65B

Description
Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size66KB,2 Pages
ManufacturerDiodes Incorporated
Download Datasheet Parametric Compare View All

BCW65B Overview

Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN

BCW65B Parametric

Parameter NameAttribute value
MakerDiodes Incorporated
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.8 A
Collector-emitter maximum voltage32 V
ConfigurationSINGLE
Minimum DC current gain (hFE)110
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Maximum off time (toff)400 ns
Maximum opening time (tons)100 ns
Base Number Matches1
SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 - AUGUST 1995
PARTMARKING DETAILS –
BCW65A – EA
BCW65B – EB
BCW65C – EC
BCW66F – EF
BCW66G – EG
BCW66H – EH
COMPLEMENTARY TYPES –
BCW65 – BCW67
BCW66 – BCW68
BCW65AR –
BCW65BR –
BCW65CR –
BCW66FR –
BCW66GR –
BCW66HR –
4V
5V
6V
7P
5T
7M
Not Recommended for New Design
Please Use BCW66H
BCW65
BCW66
C
B
E
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current(10ms)
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
j
:T
stg
BCW65
60
32
5
800
1000
100
330
-55 to +150
BCW66
75
45
UNIT
V
V
V
mA
mA
mA
mW
°C
3 - 27

BCW65B Related Products

BCW65B BCW65AR BCW65BR
Description Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN Small Signal Bipolar Transistor, 0.8A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
Maker Diodes Incorporated Diodes Incorporated Diodes Incorporated
Parts packaging code SOT-23 SOT-23 SOT-23
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.8 A 0.8 A 0.8 A
Collector-emitter maximum voltage 32 V 32 V 32 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 110 75 110
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz
Maximum off time (toff) 400 ns 400 ns 400 ns
Maximum opening time (tons) 100 ns 100 ns 100 ns
Maximum operating temperature - 150 °C 150 °C

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