GP2L24J0000F
GP2L24J0000F
Detecting Distance : 0.7mm
Darlington Phototransistor Output
Compact Reflective
Photointerrupter
■
Description
GP2L24J0000F
is a compact-package, darlington
phototransistor output, reflective photointerrupter,
with emitter and detector facing the same direction in
a molding that provides non-contact sensing. The
compact package series is a result of unique technology,
combing transfer and injection molding, that also blocks
visible light to minimize false detection.
■
Agency approvals/Compliance
1. Compliant with RoHS directive
■
Applications
1. Detection of object presence or motion.
2. Example : printer, optical storage
■
Features
1. Reflective with Darlington Phototransistor Output
2. Highlights :
• Compact Size
3. Key Parameters :
• Optimal Sensing Distance : 0.7mm
• Package : 4×3×1.7mm
• Visible light cut resin to prevent
4. Lead free and RoHS directive compliant
Notice The content of data sheet is subject to change without prior notice.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
1
Sheet No.: D3-A02301EN
Date Oct. 3. 2005
© SHARP Corporation
GP2L24J0000F
■
Internal Connection Diagram
Top view
4
3
1
2
1
Anode
2
Emitter
3
Collector
4
Cathode
■
Outline Dimensions
( 0.2 ) Emitter center
( 0.4 ) Detector center
(Unit : mm)
Top view
4
3
C0.7
1
1.75
2
∗
4
±0.2
4
+0.2
−0.1
0.75
1.7
3
+0.2
−0.1
4−0.4
+0.2
−0.1
4−0.15
+0.2
−0.1
(4)
±15˚
Date code mark
θ
θ
: 0 to 20˚
• Tolerance : ±0.15mm
• ( ) : Reference dimensions
• The dimensions shown do not include
those of burrs.
Burr's dimension : 0.15mm MAX.
• The dimensions indicated by
∗
refer to
those measured from the lead bending
part.
Product mass : approx. 0.04g
Plating material : SnCu (Cu : TYP. 2%)
+0.1
3.5
−0
Sheet No.: D3-A02301EN
2
GP2L24J0000F
■
Absolute Maximum Ratings
Parameter
Forward current
Input
Reverse voltage
Power dissipation
Collector-emitter voltage
Emitter-collector voltage
Output
Collector current
Collector power dissipation
Total power dissipation
Operating temperature
Storage temperature
∗
1
Soldering temperature
∗
(T
a
=
25˚C )
Symbol
Rating
Unit
I
F
50
mA
V
R
6
V
P
D
75
mW
V
CEO
35
V
V
ECO
6
V
50
mA
I
C
75
mW
P
C
100
mW
P
tot
˚C
T
opr
−
25 to
+
85
˚C
T
stg
−
40 to
+
100
T
sol
260
˚C
Soldering area
1 For 5s or less.
■
Electro-optical Characteristics
Parameter
Forward voltage
Input
Reverse current
Output
Collector dark current
∗
2
Collector current
Transfer
∗
3
Leak current
charac-
Rise time
Response time
teristics
Fall time
∗
1mm or more
Symbol
V
F
I
R
I
CEO
I
C
I
LEAK
t
r
t
f
Condition
I
F
=
20mA
V
R
=
6V
V
CE
=
10V
I
F
=
4mA, V
CE
=
2V
I
F
=
4mA, V
CE
=
5V
V
CE
=
2V, I
C
=
10
μ
A,
R
L
=
100
Ω
, d
=
1mm
MIN.
−
−
−
0.5
−
−
−
TYP.
1.2
−
−
3
−
80
70
(T
a
=
25˚C )
MAX.
Unit
1.4
V
10
μ
A
1
nA
15
mA
5
nA
400
μ
s
400
2 The condition and arrangement of the reflective object are shown below.
The rank splitting of collector current (I
C
) shall be executed according to the table below.
Rank
A
B
C
Collector current, I
C
[mA]
(I
F
=4mA,
V
CE
=2V)
0.5 to 1.9
1.45 to 5.4
4 to 15
Package sleeve color
Yellow
Transparent
Green
∗
3 Without reflective object.
●
Test Arrangement for Collector Current
Al evaporation
d=1mm glass plate
Sheet No.: D3-A02301EN
4
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