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RN4985FE(TE85L,F)

Description
tran dual npn/pnp 50v 100ma es6
CategoryDiscrete semiconductor    The transistor   
File Size281KB,6 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

RN4985FE(TE85L,F) Overview

tran dual npn/pnp 50v 100ma es6

RN4985FE(TE85L,F) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerToshiba Semiconductor
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
Minimum DC current gain (hFE)80
Number of components2
Polarity/channel typeNPN/PNP
Maximum power dissipation(Abs)0.1 W
surface mountYES
Transistor component materialsSILICON
RN4985FE
TOSHIBA Transistor Silicon NPN · PNP Epitaxial Type
(PCT Process) (Bias Resistor Built-in Transistor)
RN4985FE
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Two devices are incorporated into an Extreme-Super-Mini (6 pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
Unit: mm
Equivalent Circuit and Bias Resistor Values
Q1
C
Q2
C
B
R1
R2
B
R1
R2
JEDEC
E
2-2N1G
E
JEITA
TOSHIBA
R1: 2.2 kΩ
R2: 47 kΩ
(Q1, Q2 common)
Weight: 0.003 g (typ.)
Marking
Equivalent Circuit
(top view)
6
5
4
6E
Q1
Q2
1
2
3
Start of commercial production
2000-05
1
2014-03-01

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