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BC557ARLRM

Description
TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size384KB,25 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

BC557ARLRM Overview

TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN, BIP General Purpose Small Signal

BC557ARLRM Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)225
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)320 MHz
Base Number Matches1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
PNP Silicon
COLLECTOR
1
2
BASE
3
EMITTER
BC556,B
BC557,A,B,C
BC558B
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
BC556
–65
–80
BC557
–45
–50
–5.0
–100
625
5.0
1.5
12
– 55 to +150
BC558
–30
–30
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
200
83.3
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –2.0 mAdc, IB = 0)
V(BR)CEO
BC556
BC557
BC558
V(BR)CBO
BC556
BC557
BC558
V(BR)EBO
BC556
BC557
BC558
ICES
BC556
BC557
BC558
BC556
BC557
BC558
–2.0
–2.0
–2.0
–100
–100
–100
–4.0
–4.0
–4.0
nA
–5.0
–5.0
–5.0
–80
–50
–30
V
–65
–45
–30
V
V
Collector – Base Breakdown Voltage
(IC = –100
µAdc)
Emitter – Base Breakdown Voltage
(IE = –100
m
Adc, IC = 0)
Collector–Emitter Leakage Current
(VCES = –40 V)
(VCES = –20 V)
(VCES = –20 V, TA = 125°C)
µA
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–123
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