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S29CL016J0JBAI030

Description
Flash, 512KX32, 54ns, PBGA80, FBGA-80
Categorystorage    storage   
File Size1MB,74 Pages
ManufacturerCypress Semiconductor
Download Datasheet Parametric View All

S29CL016J0JBAI030 Overview

Flash, 512KX32, 54ns, PBGA80, FBGA-80

S29CL016J0JBAI030 Parametric

Parameter NameAttribute value
Minimum operating temperature-40 °C
Maximum operating temperature85 °C
Is it Rohs certified?No
package instructionFBGA-80
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Objectid8004812169
Maximum access time54 ns
memory density16777216 bit
memory width32
organize512KX32
Department size2K,16K
Nominal supply voltage (Vsup)3.3 V
Maximum standby current0.00006 A
switch bitYES
Parallel/SerialPARALLEL
command user interfaceYES
Data pollingYES
Number of functions1
Number of departments/size16,30
Maximum slew rate0.09 mA
technologyCMOS
Temperature levelINDUSTRIAL
startup blockBOTTOM
Memory IC TypeFLASH
Maximum supply voltage (Vsup)3.6 V
Universal Flash InterfaceYES
character code512000
Operating modeSYNCHRONOUS
Programming voltage2.7 V
ready/busyYES
Minimum supply voltage (Vsup)3 V
typeNOR TYPE
word count524288 words
JESD-30 codeR-PBGA-B80
JESD-609 codee0
Certification statusNot Qualified
Maximum seat height1.4 mm
width9 mm
length11 mm
surface mountYES
Terminal surfaceTIN LEAD
Terminal pitch1 mm
Terminal locationBOTTOM
Number of terminals80
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Encapsulate equivalent codeBGA80,8X10,40
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Terminal formBALL
S29CD032J
S29CD016J
S29CL032J
S29CL016J
32/16 Mbit, 2.6/3.3 V, Dual Boot,
Simultaneous Read/Write, Burst Flash
General Description
The Cypress S29CD-J and S29CL-J devices are Floating Gate products fabricated in 110-nm process technology. These burst-
mode Flash devices are capable of performing simultaneous read and write operations with zero latency on two separate banks,
using separate data and address pins. These products can operate up to 75 MHz (32 Mb) or 66 MHz (16 Mb), and use a single V
CC
of 2.5V to 2.75V (S29CD-J) or 3.0V to 3.6V (S29CL-J) that make them ideal for today’s demanding automotive applications.
Distinctive Characteristics
Single 2.6V (S29CD-J) or 3.3V (S29CL-J) for read/program/
erase
110 nm Floating Gate Technology
Simultaneous Read/Write operation with zero latency
x32 Data Bus
Dual Boot Sector Configuration (top and bottom)
Flexible Sector Architecture
– CD016J and CL016J: Eight 2k Double word, Thirty 16k
Double word, and Eight 2k Double Word sectors
– CD032J and CL032J: Eight 2k Double word, Sixty-two 16k
Double Word, and Eight 2k Double Word sectors
VersatileI/O™ control (1.65V to 3.6V)
Programmable Burst Interface
– Linear for 2, 4, and 8 double word burst with wrap around
Secured Silicon Sector that can be either factory or
customer locked
20 year data retention (typical)
Cycling Endurance: 1 million write cycles per sector (typical)
Command set compatible with JEDEC (JC42.4) standard
Supports Common Flash Interface (CFI)
Extended Temperature range
Persistent and Password methods of Advanced Sector
Protection
Unlock Bypass program command to reduce programming
time
ACC input pin to reduce factory programming time
Data Polling bits indicate program and erase operation
completion
Hardware (WP#) protection of two outermost sectors in the
large bank
Ready/Busy (RY/BY#) output indicates data available to
system
Suspend and Resume commands for Program and Erase
Operation
Offered Packages
– 80-pin PQFP
– 80-ball Fortified BGA (13 x 11 mm and 11 x 9mm versions)
– Pb-free package option available
– Known Good Die
Cypress Semiconductor Corporation
Document Number: 002-00948 Rev. *C
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised November 08, 2017

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