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2N5152JSF

Description
Small Signal Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size458KB,2 Pages
ManufacturerSemicoa
Websitehttp://www.snscorp.com/Semicoa.htm
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2N5152JSF Overview

Small Signal Bipolar Transistor,

2N5152JSF Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
2N5152
Silicon NPN Transistor
D a ta S h e e t
Description
S
EMICOA Corporation
offers:
Screening and processing per MIL-PRF-19500
Appendix E
JAN level (2N5152J)
JANTX level (2N5152JX)
JANTXV level (2N5152JV)
JANS level (2N5152JS)
JANSR level (2N5152JSR)
JANSF level (2N5152JSF)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
Applications
High-speed power switching
Low power
NPN silicon transistor
Features
Hermetically sealed TO-39 metal can
Also available in chip configuration
Chip geometry 9701
Reference document:
MIL-PRF-19500/544
Benefits
Please contact S
EMICOA
for special configurations
www.SEMICOA.com or (714) 979-1900
Qualification Levels: JAN, JANTX,
JANTX
V,
JANS
, JANSR and JANSR
Radiation testing available
T
C
= 25°C unless otherwise specified
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, T
A
= 25
O
C
Derate linearly above 25
O
C
Power Dissipation, T
C
= 25
O
C
Derate linearly above 25
O
C
Thermal Resistance
Operating Junction Temperature
Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
P
T
Rating
80
100
5.5
2
1
5.7
11.8
66.7
175
15
-65 to + 200
Unit
Volts
Volts
Volts
A
W
mW/°C
W
mW/°C
°C/W
°C
R
θJA
R
θJC
T
J
T
STG
Copyright© 20
10
Rev. D-2
SEMICOA
Corporation
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com

2N5152JSF Related Products

2N5152JSF 2N5152JS 2N5152JV 2N5152JSR 2N5152J 2N5152JX
Description Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3 Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3 Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3 Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3
package instruction , CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 , CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3
Reach Compliance Code unknown unknown unknown unknown unknown unknown
Base Number Matches 1 1 1 1 1 1
Parts packaging code - TO-39 TO-39 - TO-39 TO-39
Contacts - 3 3 - 3 3
ECCN code - EAR99 EAR99 - EAR99 EAR99
Maximum collector current (IC) - 2 A 2 A - 2 A 2 A
Collector-emitter maximum voltage - 80 V 80 V - 80 V 80 V
Configuration - SINGLE SINGLE - SINGLE SINGLE
Minimum DC current gain (hFE) - 20 20 - 20 20
JEDEC-95 code - TO-39 TO-39 - TO-39 TO-39
JESD-30 code - O-MBCY-W3 O-MBCY-W3 - O-MBCY-W3 O-MBCY-W3
Number of components - 1 1 - 1 1
Number of terminals - 3 3 - 3 3
Package body material - METAL METAL - METAL METAL
Package shape - ROUND ROUND - ROUND ROUND
Package form - CYLINDRICAL CYLINDRICAL - CYLINDRICAL CYLINDRICAL
Polarity/channel type - NPN NPN - NPN NPN
Guideline - MIL-19500 MIL-19500 - MIL-19500 MIL-19500
surface mount - NO NO - NO NO
Terminal form - WIRE WIRE - WIRE WIRE
Terminal location - BOTTOM BOTTOM - BOTTOM BOTTOM
transistor applications - SWITCHING SWITCHING - SWITCHING SWITCHING
Transistor component materials - SILICON SILICON - SILICON SILICON
Maximum off time (toff) - 1500 ns 1500 ns - 1500 ns 1500 ns
Maximum opening time (tons) - 500 ns 500 ns - 500 ns 500 ns
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