2N5152JS datasheet, PDF - EEWORLD Datasheet

EEWORLDEEWORLD

Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> 2N5152JS

Preview

2N5152JS: DescriptionSmall Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3; CategoryDiscrete semiconductor The transistor; File Size458KB，2 Pages; ManufacturerSemicoa; Websitehttp://www.snscorp.com/Semicoa.htm

Download Datasheet Parametric Compare View All

2N5152JS Overview

Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3

2N5152JS Parametric

Parameter Name	Attribute value
Parts packaging code	TO-39
package instruction	CYLINDRICAL, O-MBCY-W3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	2 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-39
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Guideline	MIL-19500
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	1500 ns
Maximum opening time (tons)	500 ns
Base Number Matches	1

Preview

Download Datasheet

View All

2N5152

Silicon NPN Transistor

D a ta S h e e t

Description

S

EMICOA Corporation

offers:

•

Screening and processing per MIL-PRF-19500

Appendix E

•

JAN level (2N5152J)

•

JANTX level (2N5152JX)

•

JANTXV level (2N5152JV)

•

JANS level (2N5152JS)

•

JANSR level (2N5152JSR)

•

JANSF level (2N5152JSF)

•

QCI to the applicable level

•

100% die visual inspection per MIL-STD-750 method

2072 for JANTXV and JANS

•

Radiation testing (total dose) upon request

Applications

•

High-speed power switching

•

Low power

•

NPN silicon transistor

Features

•

Hermetically sealed TO-39 metal can

Also available in chip configuration

Chip geometry 9701

Reference document:

MIL-PRF-19500/544

Benefits

Please contact S

EMICOA

for special configurations

www.SEMICOA.com or (714) 979-1900

•

Qualification Levels: JAN, JANTX,

JANTX

V,

JANS

, JANSR and JANSR

•

Radiation testing available

T

C

= 25°C unless otherwise specified

Absolute Maximum Ratings

Parameter

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current, Continuous

Power Dissipation, T

A

= 25

O

C

Derate linearly above 25

O

C

Power Dissipation, T

C

= 25

O

C

Derate linearly above 25

O

C

Thermal Resistance

Operating Junction Temperature

Storage Temperature

Symbol

V

CEO

V

CBO

V

EBO

I

C

P

T

P

T

Rating

80

100

5.5

2

1

5.7

11.8

66.7

175

15

-65 to + 200

Unit

Volts

A

W

mW/°C

W

mW/°C

°C/W

°C

R

θJA

R

θJC

T

J

T

STG

10

Rev. D-2

SEMICOA

Corporation

333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541

Page 1 of 2

www.SEMICOA.com

2N5152JS Related Products

	2N5152JS	2N5152JSF	2N5152JV	2N5152JSR	2N5152J	2N5152JX
Description	Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3	Small Signal Bipolar Transistor,	Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3	Small Signal Bipolar Transistor,	Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3	Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, HERMETIC SEALED, METAL CAN-3
package instruction	CYLINDRICAL, O-MBCY-W3	,	CYLINDRICAL, O-MBCY-W3	,	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
Base Number Matches	1	1	1	1	1	1
Parts packaging code	TO-39	-	TO-39	-	TO-39	TO-39
Contacts	3	-	3	-	3	3
ECCN code	EAR99	-	EAR99	-	EAR99	EAR99
Maximum collector current (IC)	2 A	-	2 A	-	2 A	2 A
Collector-emitter maximum voltage	80 V	-	80 V	-	80 V	80 V
Configuration	SINGLE	-	SINGLE	-	SINGLE	SINGLE
Minimum DC current gain (hFE)	20	-	20	-	20	20
JEDEC-95 code	TO-39	-	TO-39	-	TO-39	TO-39
JESD-30 code	O-MBCY-W3	-	O-MBCY-W3	-	O-MBCY-W3	O-MBCY-W3
Number of components	1	-	1	-	1	1
Number of terminals	3	-	3	-	3	3
Package body material	METAL	-	METAL	-	METAL	METAL
Package shape	ROUND	-	ROUND	-	ROUND	ROUND
Package form	CYLINDRICAL	-	CYLINDRICAL	-	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	-	NPN	-	NPN	NPN
Guideline	MIL-19500	-	MIL-19500	-	MIL-19500	MIL-19500
surface mount	NO	-	NO	-	NO	NO
Terminal form	WIRE	-	WIRE	-	WIRE	WIRE
Terminal location	BOTTOM	-	BOTTOM	-	BOTTOM	BOTTOM
transistor applications	SWITCHING	-	SWITCHING	-	SWITCHING	SWITCHING
Transistor component materials	SILICON	-	SILICON	-	SILICON	SILICON
Maximum off time (toff)	1500 ns	-	1500 ns	-	1500 ns	1500 ns
Maximum opening time (tons)	500 ns	-	500 ns	-	500 ns	500 ns

Recommended Resources

STK1045 power amplifier circuit diagram

Meter type power indication circuit

A5347 smoke detection application circuit

New electronic ringer circuit diagram

Microprocessor Teletypewriter Circuit

ML-03YD three-in-one voice circuit

Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

Popular Components