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DK1008FZ

Description
SILICON CONTROLLED RECTIFIER,800V V(DRM),100A I(T),TO-209AC
CategoryAnalog mixed-signal IC    Trigger device   
File Size209KB,2 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

DK1008FZ Overview

SILICON CONTROLLED RECTIFIER,800V V(DRM),100A I(T),TO-209AC

DK1008FZ Parametric

Parameter NameAttribute value
YTEOL0
Objectid1167302579
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Repeated peak reverse voltage800 V
Trigger device typeSCR
Nominal circuit commutation break time30 µs
Critical rise rate of minimum off-state voltage200 V/us
Maximum DC gate trigger voltage3 V
On-state non-repetitive peak current1200 A
On-state Current-Max100000 A
Maximum rms on-state current111 A
Off-state repetitive peak voltage800 V
Maximum DC gate trigger current150 mA
Maximum leakage current15 mA
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
surface mountNO

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