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DB101

Description
BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size219KB,2 Pages
ManufacturerDCCOM [ DC COMPONENTS ]
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DB101 Overview

BRIDGE RECTIFIER DIODE

DB101 Parametric

Parameter NameAttribute value
MakerDCCOM [ DC COMPONENTS ]
package instructionR-PDIP-T4
Reach Compliance Codeunknow
Minimum breakdown voltage50 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PDIP-T4
Maximum non-repetitive peak forward current30 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Maximum repetitive peak reverse voltage50 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationDUAL
DC COMPONENTS CO., LTD.
R
DB101
THRU
DB107
RECTIFIER SPECIALISTS
TECHNICAL SPECIFICATIONS OF
SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE RANGE - 50 to 1000 Volts
CURRENT - 1.0 Ampere
FEATURES
*
*
*
*
*
Good for automation insertion
Surge overload rating - 50 Amperes peak
Ideal for printed circuit board
Reliable low cost construction
Glass passivated junction
DB-1
MECHANICAL DATA
*
*
*
*
*
*
Case: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Lead: MIL-STD-202E, Method 208 guaranteed
Polarity: Symbols molded or marked on body
Mounting position: Any
Weight: 0.4 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Output Current at T
A
= 40 C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum Forward Voltage Drop per element at 1.0A DC
Maximum DC Reverse Current at Rated
DC Blocking Voltage per element
I t Rating for Fusing (t<8.3ms)
Typical Junction Capacitance ( Note1)
Typical Thermal Resistance (Note 2)
Operating and Storage Temperature Range
NOTES : 1.Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts
2
o
DB101
50
35
50
DB102
100
70
100
DB103
200
140
200
DB104
400
280
400
1.0
50
1.1
10
500
DB105
600
420
600
DB106
800
560
800
DB107
1000
700
1000
UNITS
Volts
Volts
Volts
Amps
Amps
Volts
uAmps
A Sec
pF
0
V
RRM
V
RMS
V
DC
I
O
I
FSM
V
F
I
R
I t
C
J
RθJ A
T
J,TSTG
2
@T
A
= 25
o
C
@T
A
= 125
o
C
10
25
40
-65 to + 150
2
C/W
0
C
2. Thermal Resistance from Junction to Ambient and from junction to lead mounted on P.C.B. with 0.5 x 0.5" (13x13mm) copper pads.
184

DB101 Related Products

DB101 DB102 DB103 DB104 DB105 DB106 DB107
Description BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE 1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE 1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
Maker DCCOM [ DC COMPONENTS ] DCCOM [ DC COMPONENTS ] DCCOM [ DC COMPONENTS ] DCCOM [ DC COMPONENTS ] DCCOM [ DC COMPONENTS ] DCCOM [ DC COMPONENTS ] DCCOM [ DC COMPONENTS ]
Reach Compliance Code unknow unknow unknown unknown unknown unknown unknow
Minimum breakdown voltage 50 V 100 V 200 V 400 V 600 V 800 V 1000 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 code R-PDIP-T4 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4
Maximum non-repetitive peak forward current 30 A 30 A 30 A 30 A 30 A 30 A 30 A
Number of components 4 4 4 4 4 4 4
Phase 1 1 1 1 1 1 1
Number of terminals 4 4 4 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
Maximum output current 1 A 1 A 1 A 1 A 1 A 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE
Maximum repetitive peak reverse voltage 50 V 100 V 200 V 400 V 600 V 800 V 1000 V
surface mount NO NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL
package instruction R-PDIP-T4 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4 -
Base Number Matches - - 1 1 1 1 -

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