DB103 datasheet, PDF - EEWORLD Datasheet

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DB103: Description1 A, SILICON, BRIDGE RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size219KB，2 Pages; ManufacturerDCCOM [ DC COMPONENTS ]

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DB103 Overview

1 A, SILICON, BRIDGE RECTIFIER DIODE

DB103 Parametric

Parameter Name	Attribute value
Maker	DCCOM [ DC COMPONENTS ]
package instruction	R-PDIP-T4
Reach Compliance Code	unknown
Minimum breakdown voltage	200 V
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
JESD-30 code	R-PDIP-T4
Maximum non-repetitive peak forward current	30 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Maximum repetitive peak reverse voltage	200 V
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	DUAL
Base Number Matches	1

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DC COMPONENTS CO., LTD.

R

DB101

THRU

DB107

RECTIFIER SPECIALISTS

TECHNICAL SPECIFICATIONS OF

SINGLE-PHASE SILICON BRIDGE RECTIFIER

VOLTAGE RANGE - 50 to 1000 Volts

CURRENT - 1.0 Ampere

FEATURES

*

Good for automation insertion

Surge overload rating - 50 Amperes peak

Ideal for printed circuit board

Reliable low cost construction

Glass passivated junction

DB-1

MECHANICAL DATA

*

Case: Molded plastic

Epoxy: UL 94V-0 rate flame retardant

Lead: MIL-STD-202E, Method 208 guaranteed

Polarity: Symbols molded or marked on body

Mounting position: Any

Weight: 0.4 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

o

C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Dimensions in inches and (millimeters)

SYMBOL

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Bridge Input Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Output Current at T

A

= 40 C

Peak Forward Surge Current 8.3 ms single half sine-wave

superimposed on rated load (JEDEC Method)

Maximum Forward Voltage Drop per element at 1.0A DC

Maximum DC Reverse Current at Rated

DC Blocking Voltage per element

I t Rating for Fusing (t<8.3ms)

Typical Junction Capacitance ( Note1)

Typical Thermal Resistance (Note 2)

Operating and Storage Temperature Range

NOTES : 1.Measured at 1 MH

Z

and applied reverse voltage of 4.0 volts

2

o

DB101

50

35

50

DB102

100

70

100

DB103

200

140

200

DB104

400

280

400

1.0

50

1.1

10

500

DB105

600

420

600

DB106

800

560

800

DB107

1000

700

1000

UNITS

Volts

Amps

Volts

uAmps

A Sec

pF

0

V

RRM

V

RMS

V

DC

I

O

I

FSM

V

F

I

R

I t

C

J

RθJ A

T

J,TSTG

2

@T

A

= 25

o

C

@T

A

= 125

o

C

10

25

40

-65 to + 150

2

C/W

0

C

2. Thermal Resistance from Junction to Ambient and from junction to lead mounted on P.C.B. with 0.5 x 0.5" (13x13mm) copper pads.

184

DB103 Related Products

	DB103	DB101	DB102	DB104	DB105	DB106	DB107
Description	1 A, SILICON, BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	1 A, SILICON, BRIDGE RECTIFIER DIODE	1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE	1 A, SILICON, BRIDGE RECTIFIER DIODE	1 A, SILICON, BRIDGE RECTIFIER DIODE	1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
Maker	DCCOM [ DC COMPONENTS ]	DCCOM [ DC COMPONENTS ]	DCCOM [ DC COMPONENTS ]	DCCOM [ DC COMPONENTS ]	DCCOM [ DC COMPONENTS ]	DCCOM [ DC COMPONENTS ]	DCCOM [ DC COMPONENTS ]
Reach Compliance Code	unknown	unknow	unknow	unknown	unknown	unknown	unknow
Minimum breakdown voltage	200 V	50 V	100 V	400 V	600 V	800 V	1000 V
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
JESD-30 code	R-PDIP-T4	R-PDIP-T4	R-PDIP-T4	R-PDIP-T4	R-PDIP-T4	R-PDIP-T4	R-PDIP-T4
Maximum non-repetitive peak forward current	30 A	30 A	30 A	30 A	30 A	30 A	30 A
Number of components	4	4	4	4	4	4	4
Phase	1	1	1	1	1	1	1
Number of terminals	4	4	4	4	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Maximum output current	1 A	1 A	1 A	1 A	1 A	1 A	1 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Maximum repetitive peak reverse voltage	200 V	50 V	100 V	400 V	600 V	800 V	1000 V
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
package instruction	R-PDIP-T4	R-PDIP-T4	R-PDIP-T4	R-PDIP-T4	R-PDIP-T4	R-PDIP-T4	-
Base Number Matches	1	-	-	1	1	1	-

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