The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 22 December 2011.
INCH-POUND
MIL-PRF-19500/542J
22 September 2011
SUPERSEDING
MIL-PRF-19500/542H
26 April 2010
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD EFFECT, N-CHANNEL,
SILICON, TYPES 2N6756, 2N6758, 2N6760, 2N6762,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and
MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for N-channel, enhancement-mode, MOSFET,
power transistors. Four levels of product assurance are provided for each encapsulated device type as specified in
MIL-PRF-19500
and two levels of product assurance are provided for each unencapsulated device type.
1.2 Physical dimensions. See
figure 1
(TO-204AA; formerly TO-3),
figure 2,
and
3
for JANHC and JANKC die
dimensions. See
6.6
for unencapsulated device types.
1.3 Maximum ratings. Unless otherwise specified, T
A
= +25°C.
P
T
(1)
Type
T
C
=
+25°C
W
2N6756
2N6758
2N6760
2N6762
I
S
Type
(4)
A dc
2N6756
2N6758
2N6760
2N6762
14.0
9.0
5.5
4.5
A (pk)
56
36
22
18
°C
-55 to +150
-55 to +150
-55 to +150
-55 to +150
75
75
75
75
I
DM
T
C
=
+25°C
(free air)
W
4
4
4
4
T
C
= +25°C
V dc
100
200
400
500
V dc
100
200
400
500
V
ISO
100,000
feet
altitude
V dc
±
20
±
20
±
20
±
20
A dc
14.0
9.0
5.5
4.5
T
C
= +100°C
A dc
9.0
6.0
3.5
3.0
R
θ
JC
max
T
J
= +25°C
ohms
0.18
0.4
1.0
1.5
T
J
= +150°C
ohms
0.36
0.84
2.5
3.75
°C/W
1.67
1.67
1.67
1.67
P
T
V
DS
V
DG
V
GS
I
D1
(2) (3)
I
D2
(2)
T
J
and T
STG
Max r
DS(on)
(1)
V
GS
= 10 V dc, I
D
= I
D2
400
500
See notes on next page.
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dla.mil.
Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at
https://assist.daps.dla.mil/.
AMSC N/A
FSC 5961
MIL-PRF-19500/542J
1.3 Maximum ratings - Continued.
(1)
(2)
Derate linearly 0.6 W/°C for T
C
> +25°C;
The following formula derives the maximum theoretical I
D
limit. I
D
is limited by package and internal wires
and may be limited by pin diameter:
T
JM
- T
C
I
D
=
(
R
θ
JC
)
x
(
R
DS
( on ) at T
JM
)
See
figure 4,
maximum drain current graph.
IDM = 4 x ID1 as calculated in note 2.
(3)
(4)
1.4 Primary electrical characteristics. Unless otherwise specified, T
C
= +25°C.
Min V
(BR)DSS
V
GS
= 0 V
Type
I
D
= 1 mA dc
V
GS(th)1
V
DS
≥
V
GS
I
D
= 0.25 mA
Max I
DSS1
V
GS
= 0 V
Max r
DS(on)1
(1)
V
GS
= 10 V dc
I
D
= I
D2
V
DS
= 80
percent
of rated V
DS
V dc
2N6756
2N6758
2N6760
2N6762
100
200
400
500
V dc
Min Max
2.0
4.0
2.0
4.0
2.0
4.0
2.0
4.0
µA
dc
25
25
25
25
T
J
= +25°C
ohms
0.18
0.4
1.0
1.5
(1) Pulsed (see
4.5.1).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2
MIL-PRF-19500/542J
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
-
Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750
-
Test Methods for Semiconductor Devices.
(Copies of these documents are available online at
https://assist.daps.dla.mil/quicksearch/
or
https://assist.daps.dla.mil/
or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the
text of this document and the references cited herein, the text of this document takes precedence. Nothing in this
document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 General. The individual item requirements shall be as specified in
MIL-PRF-19500
and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see
4.2
and
6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in
MIL-PRF-19500.
nC ............................ nano coulomb.
I
AS
............................ Rated avalanche current, non-repetitive.
3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in
MIL-PRF-19500,
and on
figure 1
(TO-204AA; formerly TO-3),
figures 2,
and
3
for JANHC and JANKC die dimensions.
3.4.1 Lead finish. Lead finish shall be solderable in accordance with
MIL-PRF-19500, MIL-STD-750,
and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see
6.2).
3.4.2 Internal construction. Multiple chip construction is not permitted to meet the requirements of this
specification.
3.5 Marking. Marking shall be in accordance with
MIL-PRF-19500.
3
MIL-PRF-19500/542J
Dimensions
Symbol
Inches
Min
Max
.875
.250
.495
.131
.060
.038
.312
.360
.525
.188
.135
.043
.500
.050
.151
1.177
.161
1.197
Millimeters
Min
Max
22.23
6.35
12.57
3.33
1.52
0.97
7.92
9.14
13.34
4.78
3.43
1.09
12.70
1.27
3.84
29.90
4.09
30.40
Notes
CD
CH
HR
HR
1
HT
LD
LL
LL
1
MHD
MHS
PS
PS
1
s
1
.420
.205
.655
.440
.225
.675
10.67
5.21
16.64
11.18
5.72
17.15
3, 5
3, 5
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. These dimensions should be measured at points .050 inch (1.27 mm) and .055 inch (1.40 mm) below seating
plane. When gauge is not used measurement will be made at the seating plane.
4. The seating plane of the header shall be flat within .001 inch (0.03 mm) concave to .004 inch (0.10 mm)
convex inside a .930 inch (23.62 mm) diameter circle on the center of the header and flat within .001 inch
(0.03 mm) concave to .006 inch (0.15 mm) convex overall.
5. Mounting holes shall be deburred on the seating plane side.
6. Drain is electrically connected to the case.
7. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
FIGURE 1. Physical dimensions of transistor (TO-204AA).
4
MIL-PRF-19500/542J
Inch
.016
.018
.019
.025
.026
mm
0.41
0.46
0.48
0.64
0.66
Inch
.031
.033
.034
0.41
.106
mm
0.79
0.84
0.86
1.04
2.69
Inch
.116
.148
.180
.181
mm
2.95
3.76
4.57
4.60
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Unless otherwise specified, tolerance is .005 inch (0.13 mm).
4. The physical characteristics of the die thickness are .0187 inch (0.475 mm). The back metals are
chromium, nickel and silver. The top metal is aluminum and the back contact is the drain.
5. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
FIGURE 2. JANHCA and JANKCA (A-version).
5
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